MMSF3P02HDR2. Аналоги и основные параметры
Наименование производителя: MMSF3P02HDR2
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5.6 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 135 ns
Cossⓘ - Выходная емкость: 740 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.075 Ohm
Тип корпуса: SO-8
Аналог (замена) для MMSF3P02HDR2
- подборⓘ MOSFET транзистора по параметрам
MMSF3P02HDR2 даташит
mmsf3p02hdr2.pdf
MMSF3P02HD Power MOSFET 3 Amps, 20 Volts P-Channel SO-8 These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding http //onsemi.com high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. These 3 AMPERES, 20 VOLTS devices are designed for use in low v
mmsf3p02hdrev5.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF3P02HD/D Designer's Data Sheet MMSF3P02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS devices are an advanced series of power MOSFETs 3.0 AMPERES which utilize Motorola s High Cell Density HDTMOS process. 20 V
mmsf3p02hd.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF3P02HD/D Designer's Data Sheet MMSF3P02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS devices are an advanced series of power MOSFETs 3.0 AMPERES which utilize Motorola s High Cell Density HDTMOS process. 20 V
mmsf3p02hd.pdf
MMSF3P02HD Preferred Device Power MOSFET 3 Amps, 20 Volts P-Channel SO-8 These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding http //onsemi.com high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. 3 AMPERES, 20 VOLTS MiniMOSt devices are desi
Другие IGBT... MMP7401, MMP9435, MMP9435BDY, MMP9567, MMQ60R070PTH, MMQ60R115PCTH, MMQ60R115PTH, MMQ60R190PTH, IRF540, MMSF7P03HDR2, SM2A06NSU, SM3005NSF, SM3114NAU, SM3115NSU, SM3116NBU, SM3116NSU, SM3305PSQG
History: AM30N08-80D
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