MMSF3P02HDR2 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: MMSF3P02HDR2
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5.6 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 135 ns
Cossⓘ - Выходная емкость: 740 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.075 Ohm
Тип корпуса: SO-8
Аналог (замена) для MMSF3P02HDR2
MMSF3P02HDR2 Datasheet (PDF)
mmsf3p02hdr2.pdf

MMSF3P02HDPower MOSFET3 Amps, 20 VoltsP-Channel SO-8These miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstandinghttp://onsemi.comhigh energy in the avalanche and commutation modes and thedrain-to-source diode has a very low reverse recovery time. These3 AMPERES, 20 VOLTSdevices are designed for use in low v
mmsf3p02hdrev5.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF3P02HD/DDesigner's Data SheetMMSF3P02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 3.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 V
mmsf3p02hd.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF3P02HD/DDesigner's Data SheetMMSF3P02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 3.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 V
mmsf3p02hd.pdf

MMSF3P02HDPreferred DevicePower MOSFET3 Amps, 20 VoltsP-Channel SO-8These miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstandinghttp://onsemi.comhigh energy in the avalanche and commutation modes and thedrain-to-source diode has a very low reverse recovery time.3 AMPERES, 20 VOLTSMiniMOSt devices are desi
Другие MOSFET... MMP7401 , MMP9435 , MMP9435BDY , MMP9567 , MMQ60R070PTH , MMQ60R115PCTH , MMQ60R115PTH , MMQ60R190PTH , IRF540N , MMSF7P03HDR2 , SM2A06NSU , SM3005NSF , SM3114NAU , SM3115NSU , SM3116NBU , SM3116NSU , SM3305PSQG .
History: SUD40N08-16 | RQA0009SXAQS | PSMN4R4-80PS
History: SUD40N08-16 | RQA0009SXAQS | PSMN4R4-80PS



Список транзисторов
Обновления
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
b772m transistor | mj15003g datasheet | irfp460n datasheet | mj15025g | ksa1381 replacement | m3056m mosfet | skd502t mosfet | tip 35 transistor