All MOSFET. MMSF3P02HDR2 Datasheet

 

MMSF3P02HDR2 Datasheet and Replacement


   Type Designator: MMSF3P02HDR2
   Marking Code: S3P02
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 5.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 33 nC
   tr ⓘ - Rise Time: 135 nS
   Cossⓘ - Output Capacitance: 740 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: SO-8
 
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MMSF3P02HDR2 Datasheet (PDF)

 ..1. Size:129K  onsemi
 mmsf3p02hdr2.pdf pdf_icon

MMSF3P02HDR2

MMSF3P02HDPower MOSFET3 Amps, 20 VoltsP-Channel SO-8These miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstandinghttp://onsemi.comhigh energy in the avalanche and commutation modes and thedrain-to-source diode has a very low reverse recovery time. These3 AMPERES, 20 VOLTSdevices are designed for use in low v

 3.1. Size:302K  motorola
 mmsf3p02hdrev5.pdf pdf_icon

MMSF3P02HDR2

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF3P02HD/DDesigner's Data SheetMMSF3P02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 3.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 V

 4.1. Size:259K  motorola
 mmsf3p02hd.pdf pdf_icon

MMSF3P02HDR2

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF3P02HD/DDesigner's Data SheetMMSF3P02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 3.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 V

 4.2. Size:97K  onsemi
 mmsf3p02hd.pdf pdf_icon

MMSF3P02HDR2

MMSF3P02HDPreferred DevicePower MOSFET3 Amps, 20 VoltsP-Channel SO-8These miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstandinghttp://onsemi.comhigh energy in the avalanche and commutation modes and thedrain-to-source diode has a very low reverse recovery time.3 AMPERES, 20 VOLTSMiniMOSt devices are desi

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