MMSF7P03HDR2 Todos los transistores

 

MMSF7P03HDR2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMSF7P03HDR2
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15.2 nS
   Cossⓘ - Capacitancia de salida: 580 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: SO-8
 

 Búsqueda de reemplazo de MMSF7P03HDR2 MOSFET

   - Selección ⓘ de transistores por parámetros

 

MMSF7P03HDR2 Datasheet (PDF)

 ..1. Size:89K  onsemi
 mmsf7p03hd mmsf7p03hdr2.pdf pdf_icon

MMSF7P03HDR2

MMSF7P03HDPreferred DevicePower MOSFET7 A, 30 V, P-Channel SO-8These miniature surface mount devices are designed for use in lowvoltage, high speed switching applications where power efficiency isimportant. Typical applications are DC-DC converters, and powerhttp://onsemi.commanagement in portable and battery powered products such ascomputers, printers, cellular and cordless p

 0.1. Size:803K  cn vbsemi
 mmsf7p03hdr2g.pdf pdf_icon

MMSF7P03HDR2

MMSF7P03HDR2Gwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5D

 3.1. Size:214K  motorola
 mmsf7p03hdrev2.pdf pdf_icon

MMSF7P03HDR2

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF7P03HD/DDesigner's Data SheetMMSF7P03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-ChannelField Effect TransistorsSINGLE TMOSSingle HDTMOS are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density TMOS process.30 VOLTSHDTMOS devices a

 4.1. Size:219K  motorola
 mmsf7p03hd.pdf pdf_icon

MMSF7P03HDR2

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF7P03HD/DDesigner's Data SheetMMSF7P03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-ChannelField Effect TransistorsSINGLE TMOSSingle HDTMOS are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density TMOS process.30 VOLTSHDTMOS devices a

MOSTRAR MÁS

Otros transistores... MMP9435 , MMP9435BDY , MMP9567 , MMQ60R070PTH , MMQ60R115PCTH , MMQ60R115PTH , MMQ60R190PTH , MMSF3P02HDR2 , 50N06 , SM2A06NSU , SM3005NSF , SM3114NAU , SM3115NSU , SM3116NBU , SM3116NSU , SM3305PSQG , SM3307PSQG .

History: PHD9NQ20T | STF25NM60N | FHU2N60A | LNC06R230 | BUK9Y30-75B

 

 
Back to Top

 


 
.