MMSF7P03HDR2 MOSFET. Datasheet pdf. Equivalent
Type Designator: MMSF7P03HDR2
Marking Code: S7P03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V
Maximum Drain Current |Id|: 7 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 37.9 nC
Rise Time (tr): 15.2 nS
Drain-Source Capacitance (Cd): 580 pF
Maximum Drain-Source On-State Resistance (Rds): 0.035 Ohm
Package: SO-8
MMSF7P03HDR2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MMSF7P03HDR2 Datasheet (PDF)
mmsf7p03hd mmsf7p03hdr2.pdf
MMSF7P03HDPreferred DevicePower MOSFET7 A, 30 V, P-Channel SO-8These miniature surface mount devices are designed for use in lowvoltage, high speed switching applications where power efficiency isimportant. Typical applications are DC-DC converters, and powerhttp://onsemi.commanagement in portable and battery powered products such ascomputers, printers, cellular and cordless p
mmsf7p03hdr2g.pdf
MMSF7P03HDR2Gwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5D
mmsf7p03hdrev2.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF7P03HD/DDesigner's Data SheetMMSF7P03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-Channel
mmsf7p03hd.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF7P03HD/DDesigner's Data SheetMMSF7P03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-Channel
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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