SM6008NF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SM6008NF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 210 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 1300 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0034 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de SM6008NF MOSFET
SM6008NF Datasheet (PDF)
sm6008nf sm6008nfp.pdf

SM6008NF/SM6008NFPN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/210A**, RDS(ON)= 3.4m (max.) @ VGS= 10V Reliable and RuggedS SD D Lead Free and Green Devices Available G G(RoHS Compliant) Top View of TO-220 Top View of TO-220-FPDApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Mark
sm6008nsg.pdf

SM6008NSGN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/210A**,D RDS(ON)= 3.4m (max.) @ VGS= 10VS Reliable and RuggedG Lead Free and Green Devices Available(RoHS Compliant) Top View of TO-263-3DApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM6
bsm600ga120dlc.pdf

Technische Information / technical informationIGBT-ModuleBSM600GA120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstro
bsm600ga120dlcs.pdf

Technische Information / technical informationIGBT-ModuleBSM600GA120DLCSIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstr
Otros transistores... SM5A25NSUB , SM5A26NSF , SM5A26NSFP , SM5A27NSF , SM5A27NSFP , SM6002NSF , SM6002NSKP , SM6002NSU , TK10A60D , SM6008NFP , SM6008NSG , SM6010PSU , SM6011NSF , SM6016NSU , SM6017NSF , SM6024PSF , SM6A07NSF .



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSL0406AKQ | JMSL0406AK | JMSL0406AGQ | JMSL0406AGDQ | JMSL0406AGD | JMSL04060GDQ | JMSL04055UQ | JMSL04055GQ | JMSL0403PU | JMSL0403PK | JMSL0403PGQ | JMSL0403PG | JMSL0403AU | JMSL0403AGQ | JMSL0403AG | JMTQ90N02A
Popular searches
c1841 transistor | fb42n20d | irfb3306 equivalent | irfp460 характеристики | k2837 datasheet | k389 transistor | mje15032g equivalent | nsd134