SM6008NF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SM6008NF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 300 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 25 V
Corriente continua de drenaje |Id|: 210 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 100 nC
Tiempo de subida (tr): 25 nS
Conductancia de drenaje-sustrato (Cd): 1300 pF
Resistencia entre drenaje y fuente RDS(on): 0.0034 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET SM6008NF
SM6008NF Datasheet (PDF)
sm6008nf sm6008nfp.pdf
SM6008NF/SM6008NFPN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/210A**, RDS(ON)= 3.4m (max.) @ VGS= 10V Reliable and RuggedS SD D Lead Free and Green Devices Available G G(RoHS Compliant) Top View of TO-220 Top View of TO-220-FPDApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Mark
sm6008nsg.pdf
SM6008NSGN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/210A**,D RDS(ON)= 3.4m (max.) @ VGS= 10VS Reliable and RuggedG Lead Free and Green Devices Available(RoHS Compliant) Top View of TO-263-3DApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM6
bsm600ga120dlc.pdf
Technische Information / technical informationIGBT-ModuleBSM600GA120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstro
bsm600ga120dlcs.pdf
Technische Information / technical informationIGBT-ModuleBSM600GA120DLCSIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstr
sm6002nskp.pdf
SM6002NSKP N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 60V/60A,DDD RDS(ON)=8m (max.) @ VGS=10V Reliable and RuggedGPin 1S Lead Free and Green Devices Available SS(RoHS Compliant)DFN5x6-8D (5, 6)ApplicationsG (4) SMPS Synchronous Rectifier. Power Management in DC/DC Converters.S (1, 2, 3) SMPS Secondary O-ring.N-Channel MOSFET.
sm6002nsu.pdf
SM6002NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/80A,DRDS(ON)=8m (max.) @ VGS=10VS Reliable and Rugged Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-252-3DApplications Synchronous Rectification.G Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM6002NS U
sm6009nsf.pdf
SM6009NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/160Aa, RDS(ON)= 3.6m(max.) @ VGS= 10V Reliable and RuggedSD Lead Free and Green Devices Available G(RoHS Compliant)Top View of TO-220DApplicationsG High Efficiency Synchronous Rectification in SMPS. Uninterruptible Power Supply.S High Speed Power Switching.N-Channel MO
sm6002nsf.pdf
SM6002NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/80A,RDS(ON)=8m (max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220DApplications Synchronous Rectification.G Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM6002NS F :
sm6002naf.pdf
SM6002NAFN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/82Aa,RDS(ON)= 8.0m (max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220DApplications Synchronous Rectification.G Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeS
sm600r65c.pdf
SM600R65C30V /36A Single N Power MOSFET N-Channel Super Junction Power MOSFETDescription ID 7A IRF600R65C is power MOSFET using advanced super junction technology that can realize very low VDSS 650V on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling Rdson(max) 0.6(VGS=10V, ID=3.5A) technology. These user friendly device
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
