SM6008NF PDF and Equivalents Search

 ..1. Size:281K  sino
 sm6008nf sm6008nfp.pdf

SM6008NF/SM6008NFP N-Channel Enhancement Mode MOSFET Features Pin Description 60V/210A**, RDS(ON)= 3.4m (max.) @ VGS= 10V Reliable and Rugged S S D D Lead Free and Green Devices Available G G (RoHS Compliant) Top View of TO-220 Top View of TO-220-FP D Applications G Synchronous Rectification. Power Management in Inverter Systems. S N-Channel MOSFET Ordering and Mark... See More ⇒

 7.1. Size:278K  sino
 sm6008nsg.pdf

SM6008NSG N-Channel Enhancement Mode MOSFET Features Pin Description 60V/210A**, D RDS(ON)= 3.4m (max.) @ VGS= 10V S Reliable and Rugged G Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-263-3 D Applications G Synchronous Rectification. Power Management in Inverter Systems. S N-Channel MOSFET Ordering and Marking Information Package Code SM6... See More ⇒

 9.1. Size:274K  eupec
 bsm600ga120dlc.pdf

Technische Information / technical information IGBT-Module BSM600GA120DLC IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emitter voltage Kollektor-Dauergleichstro... See More ⇒

 9.2. Size:280K  eupec
 bsm600ga120dlcs.pdf

Technische Information / technical information IGBT-Module BSM600GA120DLCS IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emitter voltage Kollektor-Dauergleichstr... See More ⇒

 9.3. Size:281K  sino
 sm6002nskp.pdf

SM6002NSKP N-Channel Enhancement Mode MOSFET Features Pin Description D 60V/60A, D D D RDS(ON)=8m (max.) @ VGS=10V Reliable and Rugged G Pin 1 S Lead Free and Green Devices Available S S (RoHS Compliant) DFN5x6-8 D (5, 6) Applications G (4) SMPS Synchronous Rectifier. Power Management in DC/DC Converters. S (1, 2, 3) SMPS Secondary O-ring. N-Channel MOSFET .... See More ⇒

 9.4. Size:261K  sino
 sm6002nsu.pdf

SM6002NSU N-Channel Enhancement Mode MOSFET Features Pin Description 60V/80A, D RDS(ON)=8m (max.) @ VGS=10V S Reliable and Rugged Lead Free and Green Devices Available G (RoHS Compliant) Top View of TO-252-3 D Applications Synchronous Rectification. G Power Management in Inverter Systems. S N-Channel MOSFET Ordering and Marking Information Package Code SM6002NS U... See More ⇒

 9.5. Size:157K  sino
 sm6009nsf.pdf

SM6009NSF N-Channel Enhancement Mode MOSFET Features Pin Description 60V/160Aa, RDS(ON)= 3.6m (max.) @ VGS= 10V Reliable and Rugged S D Lead Free and Green Devices Available G (RoHS Compliant) Top View of TO-220 D Applications G High Efficiency Synchronous Rectification in SMPS. Uninterruptible Power Supply. S High Speed Power Switching. N-Channel MO... See More ⇒

 9.6. Size:250K  sino
 sm6002nsf.pdf

SM6002NSF N-Channel Enhancement Mode MOSFET Features Pin Description 60V/80A, RDS(ON)=8m (max.) @ VGS=10V Reliable and Rugged S D Lead Free and Green Devices Available G (RoHS Compliant) Top View of TO-220 D Applications Synchronous Rectification. G Power Management in Inverter Systems. S N-Channel MOSFET Ordering and Marking Information Package Code SM6002NS F ... See More ⇒

 9.7. Size:156K  sino
 sm6002naf.pdf

SM6002NAF N-Channel Enhancement Mode MOSFET Features Pin Description 60V/82Aa, RDS(ON)= 8.0m (max.) @ VGS=10V Reliable and Rugged S D Lead Free and Green Devices Available G (RoHS Compliant) Top View of TO-220 D Applications Synchronous Rectification. G Power Management in Inverter Systems. S N-Channel MOSFET Ordering and Marking Information Package Code S... See More ⇒

 9.8. Size:874K  cn sps
 sm600r65c.pdf

SM600R65C 30V /36A Single N Power MOSFET N-Channel Super Junction Power MOSFET Description ID 7A IRF600R65C is power MOSFET using advanced super junction technology that can realize very low VDSS 650V on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling Rdson(max) 0.6 (VGS=10V, ID=3.5A) technology. These user friendly device... See More ⇒