SM6008NF
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SM6008NF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 300
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 210
A
Tjⓘ - Максимальная температура канала: 175
°C
Qgⓘ -
Общий заряд затвора: 100
nC
trⓘ -
Время нарастания: 25
ns
Cossⓘ - Выходная емкость: 1300
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0034
Ohm
Тип корпуса:
TO-220
Аналог (замена) для SM6008NF
SM6008NF
Datasheet (PDF)
..1. Size:281K sino
sm6008nf sm6008nfp.pdf 
SM6008NF/SM6008NFPN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/210A**, RDS(ON)= 3.4m (max.) @ VGS= 10V Reliable and RuggedS SD D Lead Free and Green Devices Available G G(RoHS Compliant) Top View of TO-220 Top View of TO-220-FPDApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Mark
7.1. Size:278K sino
sm6008nsg.pdf 
SM6008NSGN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/210A**,D RDS(ON)= 3.4m (max.) @ VGS= 10VS Reliable and RuggedG Lead Free and Green Devices Available(RoHS Compliant) Top View of TO-263-3DApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM6
9.1. Size:274K eupec
bsm600ga120dlc.pdf 
Technische Information / technical informationIGBT-ModuleBSM600GA120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstro
9.2. Size:280K eupec
bsm600ga120dlcs.pdf 
Technische Information / technical informationIGBT-ModuleBSM600GA120DLCSIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstr
9.3. Size:281K sino
sm6002nskp.pdf 
SM6002NSKP N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 60V/60A,DDD RDS(ON)=8m (max.) @ VGS=10V Reliable and RuggedGPin 1S Lead Free and Green Devices Available SS(RoHS Compliant)DFN5x6-8D (5, 6)ApplicationsG (4) SMPS Synchronous Rectifier. Power Management in DC/DC Converters.S (1, 2, 3) SMPS Secondary O-ring.N-Channel MOSFET.
9.4. Size:261K sino
sm6002nsu.pdf 
SM6002NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/80A,DRDS(ON)=8m (max.) @ VGS=10VS Reliable and Rugged Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-252-3DApplications Synchronous Rectification.G Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM6002NS U
9.5. Size:157K sino
sm6009nsf.pdf 
SM6009NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/160Aa, RDS(ON)= 3.6m(max.) @ VGS= 10V Reliable and RuggedSD Lead Free and Green Devices Available G(RoHS Compliant)Top View of TO-220DApplicationsG High Efficiency Synchronous Rectification in SMPS. Uninterruptible Power Supply.S High Speed Power Switching.N-Channel MO
9.6. Size:250K sino
sm6002nsf.pdf 
SM6002NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/80A,RDS(ON)=8m (max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220DApplications Synchronous Rectification.G Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM6002NS F :
9.7. Size:156K sino
sm6002naf.pdf 
SM6002NAFN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/82Aa,RDS(ON)= 8.0m (max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220DApplications Synchronous Rectification.G Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeS
9.8. Size:874K cn sps
sm600r65c.pdf 
SM600R65C30V /36A Single N Power MOSFET N-Channel Super Junction Power MOSFETDescription ID 7A IRF600R65C is power MOSFET using advanced super junction technology that can realize very low VDSS 650V on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling Rdson(max) 0.6(VGS=10V, ID=3.5A) technology. These user friendly device
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