VN0109N2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VN0109N2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 6 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 90 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 20 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
Paquete / Cubierta: TO-39
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VN0109N2 Datasheet (PDF)
vn0109.pdf

Supertex inc. VN0109N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, silicon-gate Low power drive requirementmanufacturing process. This combination produces a device with Ease of parallelingthe power
vn0104.pdf

Supertex inc. VN0104N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, silicon- Low power drive requirementgate manufacturing process. This combination produces a Ease of parallelingdevice with the power
Otros transistores... VN0104ND , VN0106N2 , VN0106N3 , VN0106N5 , VN0106N6 , VN0106N7 , VN0106N9 , VN0106ND , IRF630 , VN0109N3 , VN0109N5 , VN0109N9 , VN0109ND , VN0300 , VN0300L , VN0335N1 , VN0335N5 .
History: FDP054N10 | VN0106N5 | NTR4503N | FS50VS-3 | VN0104ND | NTP6413AN
History: FDP054N10 | VN0106N5 | NTR4503N | FS50VS-3 | VN0104ND | NTP6413AN



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