VN0109N2 Specs and Replacement
Type Designator: VN0109N2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 90 V
|Id| ⓘ - Maximum Drain Current: 2 A
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 20 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO-39
VN0109N2 substitution
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VN0109N2 datasheet
vn0104n2 vn0104n3 vn0104n5 vn0104n6 vn0104n7 vn0104n9 vn0104nd vn0106n2 vn0106n3 vn0106n5 vn0106n6 vn0106n7 vn0106n9 vn0106nd vn0109n2 vn0109n3 vn0109n5 vn0109n9 vn0109nd.pdf
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vn0109.pdf
Supertex inc. VN0109 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, silicon-gate Low power drive requirement manufacturing process. This combination produces a device with Ease of paralleling the power... See More ⇒
vn0104.pdf
Supertex inc. VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, silicon- Low power drive requirement gate manufacturing process. This combination produces a Ease of paralleling device with the power... See More ⇒
Detailed specifications: VN0104ND, VN0106N2, VN0106N3, VN0106N5, VN0106N6, VN0106N7, VN0106N9, VN0106ND, IRF640N, VN0109N3, VN0109N5, VN0109N9, VN0109ND, VN0300, VN0300L, VN0335N1, VN0335N5
Keywords - VN0109N2 MOSFET specs
VN0109N2 cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: VS3640DP | VS3640DE
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