VN2106 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VN2106
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 13 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
Encapsulados: TO-92
Búsqueda de reemplazo de VN2106 MOSFET
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VN2106 datasheet
vn2106.pdf
VN2106 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown The Supertex VN2106 is an enhancement-mode (normally- off) transistor that utilizes a vertical DMOS structure Low power drive requirement and Supertex s well-proven silicon-gate manufacturing Ease of paralleling process. This combination produces a device wit
zvn2106g.pdf
SOT223 N-CHANNEL ENHANCEMENT ZVN2106G MODE VERTICAL DMOS FET ISSUE 3 NOVEMBER 1995 FEATURES * 60 Volt VDS D * RDS(on)=2 S COMPLEMENTARY TYPE - ZVP2106G D PARTMARKING DETAIL - ZVN2106 G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V 3.0 Continuous Drain Current at Tamb=25 C ID 710 mA Pulsed Drain Current IDM 8A Gate Source Voltage V
zvn2106b.pdf
ZVN2106B MECHANICAL DATA N CHANNEL Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) ENHANCEMENT MODE 7.75 (0.305) 8.51 (0.335) MOSFET 6.10 (0.240) 6.60 (0.260) V 60V DSS I 1.2A 0.89 max. D (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. R 2.0 DS(on) 5.08 (0.200) typ. FEATURES Faster switching 2.54 Low Ciss 2 (0.100) 1 3 In
zvn2106astoa zvn2106astob zvn2106astz.pdf
N-CHANNEL ENHANCEMENT ZVN2106A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 60 Volt VDS * RDS(on)=2 D G S E-Line ID= 1A TO92 Compatible ABSOLUTE MAXIMUM RATINGS. 0.5A PARAMETER SYMBOL VALUE UNIT 0.25A Drain-Source Voltage VDS 60 V 8 10 Continuous Drain Current at Tamb=25 C ID 450 mA Pulsed Drain Current IDM 8A s Gate Source Voltage VGS 20 V Power Diss
Otros transistores... VN10K-TO18 , VN10LE , VN10LLS , VN10LM , VN1206 , VN1304 , VN1306 , VN1310 , 5N65 , VN2110 , VN2210N2 , VN2210N3 , VN2222KM , VN2222LLG , VN2222LM , VN2224 , VN2406 .
History: IRLU8726 | BLM2302 | WMK14N70C4 | 2SK1647S | VP0300M | BLM7002K | VBZM8N50
History: IRLU8726 | BLM2302 | WMK14N70C4 | 2SK1647S | VP0300M | BLM7002K | VBZM8N50
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