Справочник MOSFET. VN2106

 

VN2106 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: VN2106
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 13 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 4 Ohm
   Тип корпуса: TO-92

 Аналог (замена) для VN2106

 

 

VN2106 Datasheet (PDF)

 ..1. Size:462K  supertex
vn2106.pdf

VN2106
VN2106

VN2106N-Channel Enhancement-ModeVertical DMOS FETsFeaturesGeneral Description Free from secondary breakdown The Supertex VN2106 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure Low power drive requirementand Supertexs well-proven silicon-gate manufacturing Ease of parallelingprocess. This combination produces a device wit

 0.1. Size:35K  diodes
zvn2106g.pdf

VN2106
VN2106

SOT223 N-CHANNEL ENHANCEMENTZVN2106GMODE VERTICAL DMOS FETISSUE 3 NOVEMBER 1995FEATURES* 60 Volt VDSD* RDS(on)=2SCOMPLEMENTARY TYPE - ZVP2106GDPARTMARKING DETAIL - ZVN2106GABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 V3.0Continuous Drain Current at Tamb=25C ID 710 mAPulsed Drain Current IDM 8AGate Source Voltage V

 0.2. Size:100K  diodes
zvn2106b.pdf

VN2106
VN2106

ZVN2106B MECHANICAL DATA NCHANNEL Dimensions in mm (inches) 8.51 (0.34)9.40 (0.37)ENHANCEMENT MODE 7.75 (0.305) 8.51 (0.335)MOSFET 6.10 (0.240)6.60 (0.260)V 60VDSSI 1.2A0.89max.D(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)dia. R 2.0 DS(on)5.08 (0.200)typ.FEATURES Faster switching 2.54 Low Ciss 2 (0.100)1 3 In

 0.3. Size:38K  diodes
zvn2106astoa zvn2106astob zvn2106astz.pdf

VN2106
VN2106

N-CHANNEL ENHANCEMENTZVN2106AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 60 Volt VDS* RDS(on)=2D G SE-LineID=1ATO92 CompatibleABSOLUTE MAXIMUM RATINGS.0.5APARAMETER SYMBOL VALUE UNIT0.25ADrain-Source Voltage VDS 60 V8 10Continuous Drain Current at Tamb=25C ID 450 mAPulsed Drain Current IDM 8As Gate Source Voltage VGS 20 VPower Diss

 0.4. Size:49K  diodes
zvn2106a.pdf

VN2106
VN2106

N-CHANNEL ENHANCEMENTZVN2106AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 60 Volt VDS* RDS(on)=2D G SE-LineID=1ATO92 CompatibleABSOLUTE MAXIMUM RATINGS.0.5APARAMETER SYMBOL VALUE UNIT0.25ADrain-Source Voltage VDS 60 V8 10Continuous Drain Current at Tamb=25C ID 450 mAPulsed Drain Current IDM 8As Gate Source Voltage VGS 20 VPower Diss

 0.5. Size:27K  diodes
zvn2106gta zvn2106gtc.pdf

VN2106
VN2106

SOT223 N-CHANNEL ENHANCEMENTZVN2106GMODE VERTICAL DMOS FETISSUE 3 NOVEMBER 1995FEATURES* 60 Volt VDSD* RDS(on)=2SCOMPLEMENTARY TYPE - ZVP2106GDPARTMARKING DETAIL - ZVN2106GABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 V3.0Continuous Drain Current at Tamb=25C ID 710 mAPulsed Drain Current IDM 8AGate Source Voltage V

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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