VN2106 MOSFET. Datasheet pdf. Equivalent

   Type Designator: VN2106
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 0.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 13 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: TO-92

VN2106 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

VN2106 Datasheet (PDF)

..1. Size:462K supertex
vn2106.pdf

VN2106N-Channel Enhancement-ModeVertical DMOS FETsFeaturesGeneral Description Free from secondary breakdown The Supertex VN2106 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure Low power drive requirementand Supertexs well-proven silicon-gate manufacturing Ease of parallelingprocess. This combination produces a device wit

0.1. Size:35K diodes
zvn2106g.pdf

SOT223 N-CHANNEL ENHANCEMENTZVN2106GMODE VERTICAL DMOS FETISSUE 3 NOVEMBER 1995FEATURES* 60 Volt VDSD* RDS(on)=2SCOMPLEMENTARY TYPE - ZVP2106GDPARTMARKING DETAIL - ZVN2106GABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 V3.0Continuous Drain Current at Tamb=25C ID 710 mAPulsed Drain Current IDM 8AGate Source Voltage V

0.2. Size:100K diodes
zvn2106b.pdf

ZVN2106B MECHANICAL DATA NCHANNEL Dimensions in mm (inches) 8.51 (0.34)9.40 (0.37)ENHANCEMENT MODE 7.75 (0.305) 8.51 (0.335)MOSFET 6.10 (0.240)6.60 (0.260)V 60VDSSI 1.2A0.89max.D(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)dia. R 2.0 DS(on)5.08 (0.200)typ.FEATURES Faster switching 2.54 Low Ciss 2 (0.100)1 3 In

0.3. Size:38K diodes
zvn2106astoa zvn2106astob zvn2106astz.pdf

N-CHANNEL ENHANCEMENTZVN2106AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 60 Volt VDS* RDS(on)=2D G SE-LineID=1ATO92 CompatibleABSOLUTE MAXIMUM RATINGS.0.5APARAMETER SYMBOL VALUE UNIT0.25ADrain-Source Voltage VDS 60 V8 10Continuous Drain Current at Tamb=25C ID 450 mAPulsed Drain Current IDM 8As Gate Source Voltage VGS 20 VPower Diss

0.4. Size:49K diodes
zvn2106a.pdf