SMC3407 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SMC3407

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.4 nS

Cossⓘ - Capacitancia de salida: 102 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.054 Ohm

Encapsulados: SOT-23L

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SMC3407 datasheet

 ..1. Size:369K  semtron
 smc3407.pdf pdf_icon

SMC3407

SMC3407 -30V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC3407 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m (typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-3.0A, RDS(ON) =70m (typ.)@VGS =-4.5V high cell density. advanced trench technology to provide excellent RDS(ON) Super high density cell design

 0.1. Size:907K  cn vbsemi
 smc3407s.pdf pdf_icon

SMC3407

SMC3407S www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23

 8.1. Size:372K  semtron
 smc3401.pdf pdf_icon

SMC3407

SMC3401 -30V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC3401 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m (typ)@VGS =-10V mode power field effect transistor is produced using -30V/-3.5A, RDS(ON) =50m (typ)@VGS =-4.5V high cell density. advanced trench technology to -30V/-2.5A, RDS(ON) =65m (typ)@VGS =-2.5V provide excelle

 8.2. Size:361K  semtron
 smc3400.pdf pdf_icon

SMC3407

SMC3400 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC3400 is the N-Channel logic enhancement 30V/5A, RDS(ON) =25m (typ.)@VGS =10V mode power field effect transistor is produced using 30V/4A, RDS(ON) =28m (typ.)@VGS =4.5V high cell density. advanced trench technology to 30V/3A, RDS(ON) =37m (typ.)@VGS =2.5V provide excellent RDS(ON).lo

MOSTRAR MÁS

Otros transistores... SM9A01NSFP, SMC2333, SMC2342A, SMC2360, SMC3054, SMC3056, SMC3400, SMC3401, IRFB7545, SMC3414, SMC3415A, SMC3535, SMC4420, SMC4428, SMC4738, SMC4812, SMC8205AS