SMC3407 Datasheet and Replacement. Cross Reference Search

SMC3407 Datasheet (PDF)

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SMC3407 -30V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3407 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m(typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-3.0A, RDS(ON) =70m(typ.)@VGS =-4.5V high cell density. advanced trench technology to provide excellent RDS(ON) Super high density cell design

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SMC3407Swww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23

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SMC3401 -30V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3401 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m(typ)@VGS =-10V mode power field effect transistor is produced using -30V/-3.5A, RDS(ON) =50m(typ)@VGS =-4.5V high cell density. advanced trench technology to -30V/-2.5A, RDS(ON) =65m(typ)@VGS =-2.5V provide excelle

8.2. Size:361K semtron
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SMC3400 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3400 is the N-Channel logic enhancement 30V/5A, RDS(ON) =25m(typ.)@VGS =10V mode power field effect transistor is produced using 30V/4A, RDS(ON) =28m(typ.)@VGS =4.5V high cell density. advanced trench technology to 30V/3A, RDS(ON) =37m(typ.)@VGS =2.5V provide excellent RDS(ON).lo

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .