SMC3415A Todos los transistores

 

SMC3415A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SMC3415A
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.56 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 4.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9.7 nS
   Cossⓘ - Capacitancia de salida: 771 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: SOT-23
     - Selección de transistores por parámetros

 

SMC3415A Datasheet (PDF)

 ..1. Size:357K  semtron
 smc3415a.pdf pdf_icon

SMC3415A

SMC3415A -20V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3415A is the P-Channel logic -20V/-4.0A, RDS(ON) =43m(typ)@VGS =-4.5V enhancement mode power field effect transistor is -20V/-4.0A, RDS(ON) =58m(typ)@VGS =-2.5V produced using high cell density. advanced trench -20V/-2.0A, RDS(ON) =78m(typ)@VGS =-1.8V technology to provide excel

 8.1. Size:360K  semtron
 smc3414.pdf pdf_icon

SMC3415A

SMC3414 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3414 is the N-Channel logic enhancement 20V/5.0A, RDS(ON) =30m(typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/4.5A, RDS(ON) =42m(typ.)@VGS =2.5V high cell density. advanced trench technology to 20V/3.8A, RDS(ON) =50m(typ.)@VGS =1.8V provide excellent RDS

 9.1. Size:369K  semtron
 smc3407.pdf pdf_icon

SMC3415A

SMC3407 -30V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3407 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m(typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-3.0A, RDS(ON) =70m(typ.)@VGS =-4.5V high cell density. advanced trench technology to provide excellent RDS(ON) Super high density cell design

 9.2. Size:372K  semtron
 smc3401.pdf pdf_icon

SMC3415A

SMC3401 -30V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3401 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m(typ)@VGS =-10V mode power field effect transistor is produced using -30V/-3.5A, RDS(ON) =50m(typ)@VGS =-4.5V high cell density. advanced trench technology to -30V/-2.5A, RDS(ON) =65m(typ)@VGS =-2.5V provide excelle

MOSTRAR MÁS

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IXFH16N50P3 | NCEP070N10GU | RJK0629DPK | 2SK2907-01 | WMQ46N03T1 | RUH1H130S | FDB6690S

 

 
Back to Top

 


 
.