SMC3415A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SMC3415A

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.56 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 4.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9.7 nS

Cossⓘ - Capacitancia de salida: 771 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm

Encapsulados: SOT-23

 Búsqueda de reemplazo de SMC3415A MOSFET

- Selecciónⓘ de transistores por parámetros

 

SMC3415A datasheet

 ..1. Size:357K  semtron
 smc3415a.pdf pdf_icon

SMC3415A

SMC3415A -20V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC3415A is the P-Channel logic -20V/-4.0A, RDS(ON) =43m (typ)@VGS =-4.5V enhancement mode power field effect transistor is -20V/-4.0A, RDS(ON) =58m (typ)@VGS =-2.5V produced using high cell density. advanced trench -20V/-2.0A, RDS(ON) =78m (typ)@VGS =-1.8V technology to provide excel

 8.1. Size:360K  semtron
 smc3414.pdf pdf_icon

SMC3415A

SMC3414 20V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC3414 is the N-Channel logic enhancement 20V/5.0A, RDS(ON) =30m (typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/4.5A, RDS(ON) =42m (typ.)@VGS =2.5V high cell density. advanced trench technology to 20V/3.8A, RDS(ON) =50m (typ.)@VGS =1.8V provide excellent RDS

 9.1. Size:369K  semtron
 smc3407.pdf pdf_icon

SMC3415A

SMC3407 -30V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC3407 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m (typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-3.0A, RDS(ON) =70m (typ.)@VGS =-4.5V high cell density. advanced trench technology to provide excellent RDS(ON) Super high density cell design

 9.2. Size:372K  semtron
 smc3401.pdf pdf_icon

SMC3415A

SMC3401 -30V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC3401 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m (typ)@VGS =-10V mode power field effect transistor is produced using -30V/-3.5A, RDS(ON) =50m (typ)@VGS =-4.5V high cell density. advanced trench technology to -30V/-2.5A, RDS(ON) =65m (typ)@VGS =-2.5V provide excelle

MOSTRAR MÁS

Otros transistores... SMC2342A, SMC2360, SMC3054, SMC3056, SMC3400, SMC3401, SMC3407, SMC3414, K2611, SMC3535, SMC4420, SMC4428, SMC4738, SMC4812, SMC8205AS, SMC8205AW, SMC8810