All MOSFET. SMC3415A Datasheet

 

SMC3415A Datasheet and Replacement


   Type Designator: SMC3415A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.8 V
   |Id| ⓘ - Maximum Drain Current: 4.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 9.6 nC
   tr ⓘ - Rise Time: 9.7 nS
   Cossⓘ - Output Capacitance: 771 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT-23
 

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SMC3415A Datasheet (PDF)

 ..1. Size:357K  semtron
 smc3415a.pdf pdf_icon

SMC3415A

SMC3415A -20V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3415A is the P-Channel logic -20V/-4.0A, RDS(ON) =43m(typ)@VGS =-4.5V enhancement mode power field effect transistor is -20V/-4.0A, RDS(ON) =58m(typ)@VGS =-2.5V produced using high cell density. advanced trench -20V/-2.0A, RDS(ON) =78m(typ)@VGS =-1.8V technology to provide excel

 8.1. Size:360K  semtron
 smc3414.pdf pdf_icon

SMC3415A

SMC3414 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3414 is the N-Channel logic enhancement 20V/5.0A, RDS(ON) =30m(typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/4.5A, RDS(ON) =42m(typ.)@VGS =2.5V high cell density. advanced trench technology to 20V/3.8A, RDS(ON) =50m(typ.)@VGS =1.8V provide excellent RDS

 9.1. Size:369K  semtron
 smc3407.pdf pdf_icon

SMC3415A

SMC3407 -30V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3407 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m(typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-3.0A, RDS(ON) =70m(typ.)@VGS =-4.5V high cell density. advanced trench technology to provide excellent RDS(ON) Super high density cell design

 9.2. Size:372K  semtron
 smc3401.pdf pdf_icon

SMC3415A

SMC3401 -30V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3401 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m(typ)@VGS =-10V mode power field effect transistor is produced using -30V/-3.5A, RDS(ON) =50m(typ)@VGS =-4.5V high cell density. advanced trench technology to -30V/-2.5A, RDS(ON) =65m(typ)@VGS =-2.5V provide excelle

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Datasheet: SMC2342A , SMC2360 , SMC3054 , SMC3056 , SMC3400 , SMC3401 , SMC3407 , SMC3414 , IRF9640 , SMC3535 , SMC4420 , SMC4428 , SMC4738 , SMC4812 , SMC8205AS , SMC8205AW , SMC8810 .

Keywords - SMC3415A MOSFET datasheet

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