SMC3415A
MOSFET. Datasheet pdf. Equivalent
Type Designator: SMC3415A
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.56
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.8
V
|Id|ⓘ - Maximum Drain Current: 4.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9.6
nC
trⓘ - Rise Time: 9.7
nS
Cossⓘ -
Output Capacitance: 771
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05
Ohm
Package:
SOT-23
SMC3415A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SMC3415A
Datasheet (PDF)
..1. Size:357K semtron
smc3415a.pdf 
SMC3415A -20V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3415A is the P-Channel logic -20V/-4.0A, RDS(ON) =43m(typ)@VGS =-4.5V enhancement mode power field effect transistor is -20V/-4.0A, RDS(ON) =58m(typ)@VGS =-2.5V produced using high cell density. advanced trench -20V/-2.0A, RDS(ON) =78m(typ)@VGS =-1.8V technology to provide excel
8.1. Size:360K semtron
smc3414.pdf
SMC3414 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3414 is the N-Channel logic enhancement 20V/5.0A, RDS(ON) =30m(typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/4.5A, RDS(ON) =42m(typ.)@VGS =2.5V high cell density. advanced trench technology to 20V/3.8A, RDS(ON) =50m(typ.)@VGS =1.8V provide excellent RDS
9.1. Size:369K semtron
smc3407.pdf
SMC3407 -30V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3407 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m(typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-3.0A, RDS(ON) =70m(typ.)@VGS =-4.5V high cell density. advanced trench technology to provide excellent RDS(ON) Super high density cell design
9.2. Size:372K semtron
smc3401.pdf
SMC3401 -30V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3401 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m(typ)@VGS =-10V mode power field effect transistor is produced using -30V/-3.5A, RDS(ON) =50m(typ)@VGS =-4.5V high cell density. advanced trench technology to -30V/-2.5A, RDS(ON) =65m(typ)@VGS =-2.5V provide excelle
9.3. Size:361K semtron
smc3400.pdf
SMC3400 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3400 is the N-Channel logic enhancement 30V/5A, RDS(ON) =25m(typ.)@VGS =10V mode power field effect transistor is produced using 30V/4A, RDS(ON) =28m(typ.)@VGS =4.5V high cell density. advanced trench technology to 30V/3A, RDS(ON) =37m(typ.)@VGS =2.5V provide excellent RDS(ON).lo
9.4. Size:907K cn vbsemi
smc3407s.pdf
SMC3407Swww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23
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