SMC3415A MOSFET Datasheet: P-Ch, 20V, 4.7A. Full specification with pinout and replacement list

SMC3415A Specs and Replacement

Type Designator: SMC3415A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 4.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.7 nS

Cossⓘ - Output Capacitance: 771 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SOT-23

SMC3415A substitution

- MOSFET ⓘ Cross-Reference Search

SMC3415A datasheet

..1. Size:357K semtron
smc3415a.pdf pdf_icon

SMC3415A -20V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC3415A is the P-Channel logic -20V/-4.0A, RDS(ON) =43m (typ)@VGS =-4.5V enhancement mode power field effect transistor is -20V/-4.0A, RDS(ON) =58m (typ)@VGS =-2.5V produced using high cell density. advanced trench -20V/-2.0A, RDS(ON) =78m (typ)@VGS =-1.8V technology to provide excel... See More ⇒

8.1. Size:360K semtron
smc3414.pdf pdf_icon

SMC3414 20V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC3414 is the N-Channel logic enhancement 20V/5.0A, RDS(ON) =30m (typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/4.5A, RDS(ON) =42m (typ.)@VGS =2.5V high cell density. advanced trench technology to 20V/3.8A, RDS(ON) =50m (typ.)@VGS =1.8V provide excellent RDS... See More ⇒

9.1. Size:369K semtron
smc3407.pdf pdf_icon

SMC3407 -30V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC3407 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m (typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-3.0A, RDS(ON) =70m (typ.)@VGS =-4.5V high cell density. advanced trench technology to provide excellent RDS(ON) Super high density cell design ... See More ⇒

9.2. Size:372K semtron
smc3401.pdf pdf_icon

SMC3401 -30V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC3401 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m (typ)@VGS =-10V mode power field effect transistor is produced using -30V/-3.5A, RDS(ON) =50m (typ)@VGS =-4.5V high cell density. advanced trench technology to -30V/-2.5A, RDS(ON) =65m (typ)@VGS =-2.5V provide excelle... See More ⇒