VP2110 Todos los transistores

 ..1. Size:638K  supertex
 vp2110.pdf

Supertex inc. VP2110 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown The Supertex VP2110 is an enhancement-mode (normally- off) transistor that utilizes a vertical DMOS structure and Low power drive requirement Supertex s well-proven silicon-gate manufacturing process. Ease of paralleling This combination produces

 0.1. Size:108K  diodes
 zvp2110g.pdf

SOT223 P-CHANNEL ENHANCEMENT ZVP2110G MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 T V I VD V D V 8 D V V T T V V S V 8V D T I D T I V V G V ABSOLUTE MAXIMUM RATINGS. V V T V IT V V D i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T

 0.2. Size:70K  diodes
 zvp2110a.pdf

P-CHANNEL ENHANCEMENT 0C ZVP2110A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=8 D G S E-Line TO92 Compatible ble ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT NIT Drain-Source Voltage VDS -100 V V Continuous Drain Current at Tamb=25 C ID -230 mA mA Pulsed Drain Current IDM -3 A A Gate Source Voltage VGS 20 V V Power Dis

 0.3. Size:86K  diodes
 zvp2110gta zvp2110gtc.pdf

SOT223 P-CHANNEL ENHANCEMENT ZVP2110G MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 T V I VD V D V 8 D V V T T V V S V 8V D T I D T I V V G V ABSOLUTE MAXIMUM RATINGS. V V T V IT V V D i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T

 0.4. Size:49K  diodes
 zvp2110astoa zvp2110astz.pdf

P-CHANNEL ENHANCEMENT 0C ZVP2110A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=8 D G S E-Line TO92 Compatible ble ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT NIT Drain-Source Voltage VDS -100 V V Continuous Drain Current at Tamb=25 C ID -230 mA mA Pulsed Drain Current IDM -3 A A Gate Source Voltage VGS 20 V V Power Dis