Supertex inc. VP2110P-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown The Supertex VP2110 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and Low power drive requirementSupertexs well-proven silicon-gate manufacturing process. Ease of parallelingThis combination produces

SOT223 P-CHANNEL ENHANCEMENTZVP2110GMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD V D V 8D V V T T V VS V 8VD T I D T I V VG VABSOLUTE MAXIMUM RATINGS. V V T V IT V VD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T

P-CHANNEL ENHANCEMENT0CZVP2110AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 100 Volt VDS* RDS(on)=8D G SE-LineTO92 CompatiblebleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITNITDrain-Source Voltage VDS -100 VVContinuous Drain Current at Tamb=25C ID -230 mAmAPulsed Drain Current IDM -3 AAGate Source Voltage VGS 20 VVPower Dis

SOT223 P-CHANNEL ENHANCEMENTZVP2110GMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD V D V 8D V V T T V VS V 8VD T I D T I V VG VABSOLUTE MAXIMUM RATINGS. V V T V IT V VD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T

P-CHANNEL ENHANCEMENT0CZVP2110AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 100 Volt VDS* RDS(on)=8D G SE-LineTO92 CompatiblebleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITNITDrain-Source Voltage VDS -100 VVContinuous Drain Current at Tamb=25C ID -230 mAmAPulsed Drain Current IDM -3 AAGate Source Voltage VGS 20 VVPower Dis