VP2110 MOSFET. Datasheet pdf. Equivalent

   Type Designator: VP2110
   Marking Code: P1A*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 0.12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
   Package: SOT-23

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VP2110 Datasheet (PDF)

..1. Size:638K supertex
vp2110.pdf

Supertex inc. VP2110P-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown The Supertex VP2110 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and Low power drive requirementSupertexs well-proven silicon-gate manufacturing process. Ease of parallelingThis combination produces

0.1. Size:108K diodes
zvp2110g.pdf

SOT223 P-CHANNEL ENHANCEMENTZVP2110GMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD V D V 8D V V T T V VS V 8VD T I D T I V VG VABSOLUTE MAXIMUM RATINGS. V V T V IT V VD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T

0.2. Size:70K diodes
zvp2110a.pdf

P-CHANNEL ENHANCEMENT0CZVP2110AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 100 Volt VDS* RDS(on)=8D G SE-LineTO92 CompatiblebleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITNITDrain-Source Voltage VDS -100 VVContinuous Drain Current at Tamb=25C ID -230 mAmAPulsed Drain Current IDM -3 AAGate Source Voltage VGS 20 VVPower Dis

0.3. Size:86K diodes
zvp2110gta zvp2110gtc.pdf