HFB1N60S MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HFB1N60S datasheet

..1. Size:238K semihow
hfb1n60s.pdf pdf_icon

Sep 2009 BVDSS = 600 V RDS(on) typ HFB1N60S ID = 0.3 A 600V N-Channel MOSFET TO-92 FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching Characteristics G Unrivalled Gate Charge 3.0 nC (Typ.) Extended Safe Operating Area

7.1. Size:185K semihow
hfb1n60f.pdf pdf_icon

Oct 2016 HFB1N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 1A Excellent Switching Characteristics RDS(on), Typ 6.5 100% Avalanche Tested Qg, Typ 3.7 nC RoHS Compliant TO-92 Symbol S D G Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter Value Uni

8.1. Size:238K semihow
hfb1n65s.pdf pdf_icon

Dec 2012 BVDSS = 650 V RDS(on) typ HFB1N65S ID = 0.3 A 650V N-Channel MOSFET TO-92 FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching Characteristics G Unrivalled Gate Charge 3.0 nC (Typ.) Extended Safe Operating Area

9.1. Size:226K semihow
hfb1n70s.pdf pdf_icon

Dec 2012 BVDSS = 700 V RDS(on) typ HFB1N70S ID = 0.3 A 700V N-Channel MOSFET TO-92 FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching Characteristics G Unrivalled Gate Charge 3.5 nC (Typ.) Extended Safe Operating Area

Otros transistores... HCP20NT60V , HCS12NK65V , HCS20NT60V , HCT7000M , HCT7000MTXV , HCU6N70S , HCU7NE70S , HFA9N90 , IRFP250 , HFB1N65S , HFB1N70S , HFD1N60S , HFD1N65S , HFD2N60 , HFD2N60S , HFD2N60U , HFD2N65S .