HFB1N60S - параметры транзистора MOSFET, его аналоги, datasheet

HFB1N60S Datasheet (PDF)

..1. Size:238K semihow
hfb1n60s.pdf pdf_icon

Sep 2009BVDSS = 600 VRDS(on) typ HFB1N60SID = 0.3 A600V N-Channel MOSFETTO-92FEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching CharacteristicsG Unrivalled Gate Charge : 3.0 nC (Typ.) Extended Safe Operating Area

7.1. Size:185K semihow
hfb1n60f.pdf pdf_icon

Oct 2016HFB1N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 1A Excellent Switching CharacteristicsRDS(on), Typ 6.5 100% Avalanche TestedQg, Typ 3.7 nC RoHS CompliantTO-92 SymbolSDGAbsolute Maximum Ratings TC=25 unless otherwise specifiedSymbol Parameter Value Uni

8.1. Size:238K semihow
hfb1n65s.pdf pdf_icon

Dec 2012BVDSS = 650 VRDS(on) typ HFB1N65SID = 0.3 A650V N-Channel MOSFETTO-92FEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching CharacteristicsG Unrivalled Gate Charge : 3.0 nC (Typ.) Extended Safe Operating Area

9.1. Size:226K semihow
hfb1n70s.pdf pdf_icon

Dec 2012BVDSS = 700 VRDS(on) typ HFB1N70SID = 0.3 A700V N-Channel MOSFETTO-92FEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching CharacteristicsG Unrivalled Gate Charge : 3.5 nC (Typ.) Extended Safe Operating Area

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .