HFB1N60S Datasheet and Replacement. Cross Reference Search

HFB1N60S Datasheet (PDF)

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Sep 2009BVDSS = 600 VRDS(on) typ HFB1N60SID = 0.3 A600V N-Channel MOSFETTO-92FEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching CharacteristicsG Unrivalled Gate Charge : 3.0 nC (Typ.) Extended Safe Operating Area

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Oct 2016HFB1N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 1A Excellent Switching CharacteristicsRDS(on), Typ 6.5 100% Avalanche TestedQg, Typ 3.7 nC RoHS CompliantTO-92 SymbolSDGAbsolute Maximum Ratings TC=25 unless otherwise specifiedSymbol Parameter Value Uni

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hfb1n65s.pdf pdf_icon

Dec 2012BVDSS = 650 VRDS(on) typ HFB1N65SID = 0.3 A650V N-Channel MOSFETTO-92FEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching CharacteristicsG Unrivalled Gate Charge : 3.0 nC (Typ.) Extended Safe Operating Area

9.1. Size:226K semihow
hfb1n70s.pdf pdf_icon

Dec 2012BVDSS = 700 VRDS(on) typ HFB1N70SID = 0.3 A700V N-Channel MOSFETTO-92FEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching CharacteristicsG Unrivalled Gate Charge : 3.5 nC (Typ.) Extended Safe Operating Area

Datasheet: HCP20NT60V , HCS12NK65V , HCS20NT60V , HCT7000M , HCT7000MTXV , HCU6N70S , HCU7NE70S , HFA9N90 , STF13NM60N , HFB1N65S , HFB1N70S , HFD1N60S , HFD1N65S , HFD2N60 , HFD2N60S , HFD2N60U , HFD2N65S .