HFD1N60S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HFD1N60S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 22 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 12 Ohm
   Paquete / Cubierta: D-PAK

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HFD1N60S Datasheet (PDF)

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hfd1n60s hfu1n60s.pdf

Sep 2009BVDSS = 600 VRDS(on) typ HFD1N60S / HFU1N60SID = 1.0 A600V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD1N60S HFU1N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (T

..2. Size:195K semihow
hfd1n60s.pdf

0.1. Size:1138K semihow
hfu1n60sa hfd1n60sa.pdf

Jan. 2022HFU1N60SA / HFD1N60SA600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 600 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 1.0 A Excellent Switching CharacteristicsRDS(on), Typ 9.3 100% Avalanche TestedQg, Typ 3.9 nC RoHS CompliantHFU1N60SA HFD1N60SASymbolTO-

7.1. Size:208K semihow
hfu1n60f hfd1n60f.pdf

Oct 2016HFU1N60F / HFD1N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 1A Excellent Switching CharacteristicsRDS(on), Typ 6.5 100% Avalanche TestedQg, Typ 3.7 nC RoHS CompliantHFU1N60F HFD1N60FSymbolTO-251 TO-252DSSDGGAbsolute Maximum Ratings TC=25 unless

8.1. Size:193K semihow
hfd1n65s.pdf

April 2009BVDSS = 650 VRDS(on) typ HFD1N65S / HFU1N65SID = 0.9 A650V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD1N65S HFU1N65S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching CharacteristicsG Unrivalled Gate Charge :

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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