HFD1N60S MOSFET. Datasheet pdf. Equivalent
Type Designator: HFD1N60S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 3 nC
trⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 22 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
Package: D-PAK
HFD1N60S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HFD1N60S Datasheet (PDF)
hfd1n60s hfu1n60s.pdf
Sep 2009BVDSS = 600 VRDS(on) typ HFD1N60S / HFU1N60SID = 1.0 A600V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD1N60S HFU1N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (T
hfd1n60s.pdf
Sep 2009BVDSS = 600 VRDS(on) typ HFD1N60S / HFU1N60SID = 1.0 A600V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD1N60S HFU1N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (T
hfu1n60sa hfd1n60sa.pdf
Jan. 2022HFU1N60SA / HFD1N60SA600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 600 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 1.0 A Excellent Switching CharacteristicsRDS(on), Typ 9.3 100% Avalanche TestedQg, Typ 3.9 nC RoHS CompliantHFU1N60SA HFD1N60SASymbolTO-
hfu1n60f hfd1n60f.pdf
Oct 2016HFU1N60F / HFD1N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 1A Excellent Switching CharacteristicsRDS(on), Typ 6.5 100% Avalanche TestedQg, Typ 3.7 nC RoHS CompliantHFU1N60F HFD1N60FSymbolTO-251 TO-252DSSDGGAbsolute Maximum Ratings TC=25 unless
hfd1n65s.pdf
April 2009BVDSS = 650 VRDS(on) typ HFD1N65S / HFU1N65SID = 0.9 A650V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD1N65S HFU1N65S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching CharacteristicsG Unrivalled Gate Charge :
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
