Справочник MOSFET. HFD1N60S

 

HFD1N60S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HFD1N60S
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 3 nC
   trⓘ - Время нарастания: 21 ns
   Cossⓘ - Выходная емкость: 22 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 12 Ohm
   Тип корпуса: D-PAK

 Аналог (замена) для HFD1N60S

 

 

HFD1N60S Datasheet (PDF)

 ..1. Size:195K  semihow
 hfd1n60s hfu1n60s.pdf

HFD1N60S HFD1N60S

Sep 2009BVDSS = 600 VRDS(on) typ HFD1N60S / HFU1N60SID = 1.0 A600V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD1N60S HFU1N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (T

 ..2. Size:195K  semihow
 hfd1n60s.pdf

HFD1N60S HFD1N60S

Sep 2009BVDSS = 600 VRDS(on) typ HFD1N60S / HFU1N60SID = 1.0 A600V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD1N60S HFU1N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (T

 0.1. Size:1138K  semihow
 hfu1n60sa hfd1n60sa.pdf

HFD1N60S HFD1N60S

Jan. 2022HFU1N60SA / HFD1N60SA600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 600 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 1.0 A Excellent Switching CharacteristicsRDS(on), Typ 9.3 100% Avalanche TestedQg, Typ 3.9 nC RoHS CompliantHFU1N60SA HFD1N60SASymbolTO-

 7.1. Size:208K  semihow
 hfu1n60f hfd1n60f.pdf

HFD1N60S HFD1N60S

Oct 2016HFU1N60F / HFD1N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 1A Excellent Switching CharacteristicsRDS(on), Typ 6.5 100% Avalanche TestedQg, Typ 3.7 nC RoHS CompliantHFU1N60F HFD1N60FSymbolTO-251 TO-252DSSDGGAbsolute Maximum Ratings TC=25 unless

 8.1. Size:193K  semihow
 hfd1n65s.pdf

HFD1N60S HFD1N60S

April 2009BVDSS = 650 VRDS(on) typ HFD1N65S / HFU1N65SID = 0.9 A650V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD1N65S HFU1N65S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching CharacteristicsG Unrivalled Gate Charge :

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