HFP12N65U MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HFP12N65U

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 230 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 45 nS

Cossⓘ - Capacitancia de salida: 170 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.78 Ohm

Encapsulados: TO-220

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HFP12N65U datasheet

 ..1. Size:173K  semihow
 hfp12n65u.pdf pdf_icon

HFP12N65U

July 2014 BVDSS = 650 V RDS(on) typ = 0.67 HFP12N65U ID = 12 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 42 nC (Typ.) Extended Safe Operating Area Lo

 6.1. Size:246K  semihow
 hfp12n65s.pdf pdf_icon

HFP12N65U

Aug 2009 BVDSS = 650 V RDS(on) typ = 0.67 HFP12N65S ID = 12 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 38 nC (Typ.) Unrivalled Gate Charge 38 nC (Typ ) Ext

 7.1. Size:171K  semihow
 hfp12n60u.pdf pdf_icon

HFP12N65U

July 2014 BVDSS = 600 V RDS(on) typ = 0.53 HFP12N60U ID = 12 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 42 nC (Typ.) Extended Safe Operating Area Lo

 7.2. Size:255K  semihow
 hfp12n60s.pdf pdf_icon

HFP12N65U

Nov 2007 BVDSS = 600 V RDS(on) typ = 0.53 HFP12N60S ID = 12 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 38 nC (Typ.) Unrivalled Gate Charge 38 nC (Typ ) Ext

MOSTRAR MÁS

Otros transistores... HFP10N60U, HFP10N65S, HFP10N65U, HFP10N80, HFP11N40, HFP12N60S, HFP12N60U, HFP12N65S, IRFZ44, HFP13N50S, HFP13N50U, HFP13N60U, HFP13N65U, HFP18N50U, HFP2N60S, HFP2N60U, HFP2N65S