HFP12N65U MOSFET. Datasheet pdf. Equivalent
Type Designator: HFP12N65U
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 42 nC
trⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 170 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.78 Ohm
Package: TO-220
HFP12N65U Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HFP12N65U Datasheet (PDF)
hfp12n65u.pdf
July 2014BVDSS = 650 VRDS(on) typ = 0.67 HFP12N65U ID = 12 A650V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lo
hfp12n65s.pdf
Aug 2009BVDSS = 650 VRDS(on) typ = 0.67 HFP12N65SID = 12 A650V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Unrivalled Gate Charge : 38 nC (Typ ) Ext
hfp12n60u.pdf
July 2014BVDSS = 600 VRDS(on) typ = 0.53 HFP12N60U ID = 12 A600V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lo
hfp12n60s.pdf
Nov 2007BVDSS = 600 VRDS(on) typ = 0.53 HFP12N60SID = 12 A600V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Unrivalled Gate Charge : 38 nC (Typ ) Ext
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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