HFP12N65U - аналоги, даташиты, параметры транзистора

HFP12N65U Datasheet (PDF)

..1. Size:173K semihow
hfp12n65u.pdf pdf_icon

July 2014BVDSS = 650 VRDS(on) typ = 0.67 HFP12N65U ID = 12 A650V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lo

6.1. Size:246K semihow
hfp12n65s.pdf pdf_icon

Aug 2009BVDSS = 650 VRDS(on) typ = 0.67 HFP12N65SID = 12 A650V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Unrivalled Gate Charge : 38 nC (Typ ) Ext

7.1. Size:171K semihow
hfp12n60u.pdf pdf_icon

July 2014BVDSS = 600 VRDS(on) typ = 0.53 HFP12N60U ID = 12 A600V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lo

7.2. Size:255K semihow
hfp12n60s.pdf pdf_icon

Nov 2007BVDSS = 600 VRDS(on) typ = 0.53 HFP12N60SID = 12 A600V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Unrivalled Gate Charge : 38 nC (Typ ) Ext

Другие MOSFET... HFP10N60U , HFP10N65S , HFP10N65U , HFP10N80 , HFP11N40 , HFP12N60S , HFP12N60U , HFP12N65S , IRFZ44 , HFP13N50S , HFP13N50U , HFP13N60U , HFP13N65U , HFP18N50U , HFP2N60S , HFP2N60U , HFP2N65S .