HFP6N90 Todos los transistores

 

HFP6N90 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HFP6N90
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 167 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 120 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm
   Paquete / Cubierta: TO-220
 

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HFP6N90 Datasheet (PDF)

 ..1. Size:184K  semihow
 hfp6n90.pdf pdf_icon

HFP6N90

Dec 2005BVDSS = 900 VRDS(on) typ HFP6N90ID = 6.0 A900V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON

 9.1. Size:198K  semihow
 hfp6n60u.pdf pdf_icon

HFP6N90

July 2012BVDSS = 600 VRDS(on) typ HFP6N60U ID = 6.0 A600V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area

 9.2. Size:201K  semihow
 hfp6n65u.pdf pdf_icon

HFP6N90

July 2012BVDSS = 650 VRDS(on) typ HFP6N65U ID = 6.0 A650V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area

 9.3. Size:197K  semihow
 hfp6n70u.pdf pdf_icon

HFP6N90

March 2013BVDSS = 700 VRDS(on) typ = 1.8 HFP6N70U ID = 6.0 A700V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area

MOSTRAR MÁS

Otros transistores... HFP5N60S , HFP5N60U , HFP5N65S , HFP5N65U , HFP5N70S , HFP6N60U , HFP6N65U , HFP6N70U , IRF4905 , HFP730S , HFP730U , HFP8N60S , HFP8N60U , HFP8N65S , HFP8N65U , HFP8N70U , HFP9N50 .

History: WMN10N70C4 | RRR015P03 | SFB052N80C2

 

 
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