HFP6N90 Specs and Replacement

Type Designator: HFP6N90

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 167 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: TO-220

HFP6N90 substitution

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HFP6N90 datasheet

 ..1. Size:184K  semihow
 hfp6n90.pdf pdf_icon

HFP6N90

Dec 2005 BVDSS = 900 V RDS(on) typ HFP6N90 ID = 6.0 A 900V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON... See More ⇒

 9.1. Size:198K  semihow
 hfp6n60u.pdf pdf_icon

HFP6N90

July 2012 BVDSS = 600 V RDS(on) typ HFP6N60U ID = 6.0 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 16.0 nC (Typ.) Extended Safe Operating Area ... See More ⇒

 9.2. Size:201K  semihow
 hfp6n65u.pdf pdf_icon

HFP6N90

July 2012 BVDSS = 650 V RDS(on) typ HFP6N65U ID = 6.0 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 16.0 nC (Typ.) Extended Safe Operating Area ... See More ⇒

 9.3. Size:197K  semihow
 hfp6n70u.pdf pdf_icon

HFP6N90

March 2013 BVDSS = 700 V RDS(on) typ = 1.8 HFP6N70U ID = 6.0 A 700V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 16.0 nC (Typ.) Extended Safe Operating Area ... See More ⇒

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Detailed specifications: HFP5N60S, HFP5N60U, HFP5N65S, HFP5N65U, HFP5N70S, HFP6N60U, HFP6N65U, HFP6N70U, IRF4905, HFP730S, HFP730U, HFP8N60S, HFP8N60U, HFP8N65S, HFP8N65U, HFP8N70U, HFP9N50

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