HUFA75309T3ST MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HUFA75309T3ST
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 146 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
Encapsulados: SOT-223
Búsqueda de reemplazo de HUFA75309T3ST MOSFET
- Selecciónⓘ de transistores por parámetros
HUFA75309T3ST datasheet
hufa75309t3st.pdf
HUFA75309T3ST Data Sheet December 2001 3A, 55V, 0.070 Ohm, N-Channel UltraFET Features Power MOSFET 3A, 55V This N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.070 manufactured using the innovative Diode Exhibits Both High Speed and Soft Recovery UltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE
hufa75309d3 hufa75309d3s hufa75309p3.pdf
HUFA75309P3, HUFA75309D3, HUFA75309D3S Data Sheet December 2001 19A, 55V, 0.070 Ohm, N-Channel UltraFET Features Power MOSFETs 19A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models
hufa75307t3st.pdf
HUFA75307T3ST Data Sheet December 2001 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Features Power MOSFET 2.6A, 55V This N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.090 manufactured using the innovative Diode Exhibits Both High Speed and Soft Recovery UltraFET process. This advanced process technology achieves the Temperature Compensating PSPIC
hufa75307d3st hufa75307p3 hufa75307d3 hufa75307d3s.pdf
HUFA75307P3, HUFA75307D3, HUFA75307D3S Data Sheet December 2001 15A, 55V, 0.090 Ohm, N-Channel UltraFET Features Power MOSFETs 15A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models
Otros transistores... HUF76633S3ST, HUFA75307D3, HUFA75307D3S, HUFA75307D3ST, HUFA75307P3, HUFA75309D3, HUFA75309D3S, HUFA75309P3, STF13NM60N, HUFA75321D3, HUFA75321D3ST, HUFA75321P3, HUFA75321S3S, HUFA75321S3ST, HUFA75329D3, HUFA75329D3S, HUFA75329D3ST
History: HUFA75321D3ST
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1 | CRTT067N10N | AP6NA3R2MT | AP65SA145DDT8 | AP4NAR95CMT-A | AP4024GEMT-HF | AP3P050AH
Popular searches
mj15004 | ksc2073 | nte102a | tip31cg | s9015 transistor | irf540z | ss8550 transistor | irfp240 mosfet
