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HUFA75309T3ST MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HUFA75309T3ST

Código: 5309

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.1 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 19 nC

Tiempo de elevación (tr): 20 nS

Conductancia de drenaje-sustrato (Cd): 146 pF

Resistencia drenaje-fuente RDS(on): 0.07 Ohm

Empaquetado / Estuche: SOT-223

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HUFA75309T3ST Datasheet (PDF)

1.1. hufa75309t3st.pdf Size:171K _update_mosfet

HUFA75309T3ST
HUFA75309T3ST

HUFA75309T3ST Data Sheet December 2001 3A, 55V, 0.070 Ohm, N-Channel UltraFET Features Power MOSFET • 3A, 55V This N-Channel power MOSFET is • Ultra Low On-Resistance, rDS(ON) = 0.070Ω manufactured using the innovative • Diode Exhibits Both High Speed and Soft Recovery UltraFET® process. This advanced process technology achieves the • Temperature Compensating PSPICE®

1.2. hufa75309d3 hufa75309d3s hufa75309p3.pdf Size:215K _update_mosfet

HUFA75309T3ST
HUFA75309T3ST

HUFA75309P3, HUFA75309D3, HUFA75309D3S Data Sheet December 2001 19A, 55V, 0.070 Ohm, N-Channel UltraFET Features Power MOSFETs • 19A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

 2.1. hufa75307d3st hufa75307p3 hufa75307d3 hufa75307d3s.pdf Size:215K _update_mosfet

HUFA75309T3ST
HUFA75309T3ST

HUFA75307P3, HUFA75307D3, HUFA75307D3S Data Sheet December 2001 15A, 55V, 0.090 Ohm, N-Channel UltraFET Features Power MOSFETs • 15A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

2.2. hufa75307t3st.pdf Size:174K _fairchild_semi

HUFA75309T3ST
HUFA75309T3ST

HUFA75307T3ST Data Sheet December 2001 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Features Power MOSFET 2.6A, 55V This N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.090? manufactured using the innovative Diode Exhibits Both High Speed and Soft Recovery UltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE Model lowe

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