All MOSFET. HUFA75309T3ST Datasheet

 

HUFA75309T3ST Datasheet and Replacement


   Type Designator: HUFA75309T3ST
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 146 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SOT-223
 

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HUFA75309T3ST Datasheet (PDF)

 ..1. Size:171K  fairchild semi
 hufa75309t3st.pdf pdf_icon

HUFA75309T3ST

HUFA75309T3STData Sheet December 20013A, 55V, 0.070 Ohm, N-Channel UltraFET FeaturesPower MOSFET 3A, 55VThis N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.070manufactured using the innovative Diode Exhibits Both High Speed and Soft RecoveryUltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE

 5.1. Size:215K  fairchild semi
 hufa75309d3 hufa75309d3s hufa75309p3.pdf pdf_icon

HUFA75309T3ST

HUFA75309P3, HUFA75309D3, HUFA75309D3SData Sheet December 200119A, 55V, 0.070 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 19A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models

 6.1. Size:174K  fairchild semi
 hufa75307t3st.pdf pdf_icon

HUFA75309T3ST

HUFA75307T3STData Sheet December 20012.6A, 55V, 0.090 Ohm, N-Channel UltraFET FeaturesPower MOSFET 2.6A, 55VThis N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.090manufactured using the innovative Diode Exhibits Both High Speed and Soft RecoveryUltraFET process. This advanced process technology achieves the Temperature Compensating PSPIC

 6.2. Size:215K  fairchild semi
 hufa75307d3st hufa75307p3 hufa75307d3 hufa75307d3s.pdf pdf_icon

HUFA75309T3ST

HUFA75307P3, HUFA75307D3, HUFA75307D3SData Sheet December 200115A, 55V, 0.090 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 15A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models

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Datasheet: HUF76633S3ST , HUFA75307D3 , HUFA75307D3S , HUFA75307D3ST , HUFA75307P3 , HUFA75309D3 , HUFA75309D3S , HUFA75309P3 , STF13NM60N , HUFA75321D3 , HUFA75321D3ST , HUFA75321P3 , HUFA75321S3S , HUFA75321S3ST , HUFA75329D3 , HUFA75329D3S , HUFA75329D3ST .

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