WFF12N60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WFF12N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 51 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 133 nS
Cossⓘ - Capacitancia de salida: 175 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm
Encapsulados: TO-220F
Búsqueda de reemplazo de WFF12N60 MOSFET
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WFF12N60 datasheet
wff12n60.pdf
WFF12N60 WFF12N60 WFF12N60 WFF12N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features Features Features Features 12A, 600V,R (Max 0.65 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 39nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage ( V = 4000V AC ) ISO Maximum Junction T
wff12n65.pdf
WFF12N65 WFF12N65 WFF12N65 WFF12N65 Silicon N-Channel MOSFET Features 12A,650V,RDS(on)(Max0.78 )@VGS=10V Ultra-low Gate Charge(Typical 51.7nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced using Winsemi s advanced planar stripe, VDMOS technology. This latest technol
wff12n70s.pdf
WFF12N70S WFF12N70S WFF12N70S WFF12N70S 700V Super-Junction Power MOSFET 700V Super-Junction Power MOSFET 700V Super-Junction Power MOSFET 700V Super-Junction Power MOSFET Features Ultra low Rdson Ultra low gate charge (typ. Qg = 34nC) 100% UIS tested RoHS compliant Maximum Junction Temperature Range(150 ) General Description Power MOSFET is fabricated using
Otros transistores... WFD4N60B, WFD5N50, WFD5N60B, WFD5N60C, WFD830, WFD830B, WFF10N60, WFF10N65, AOD4184A, WFF12N65, WFF12N70S, WFF13N50, WFF15N60, WFF18N50, WFF20N60, WFF20N60S, WFF2N60
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