WFF20N60S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WFF20N60S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 34 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 1700 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm

Encapsulados: TO-220F

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WFF20N60S datasheet

 ..1. Size:535K  winsemi
 wff20n60s.pdf pdf_icon

WFF20N60S

WFF20N60S WFF20N60S WFF20N60S WFF20N60S Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features Ultra low Rdson Ultra-low Gate charge(Typical 68nC) 100% UIS Tested RoHS compliant General Description Winsemi Power MOSFET is fabricated using advanced super junction technology.The resulting device has extremely low

 6.1. Size:271K  winsemi
 wff20n60.pdf pdf_icon

WFF20N60S

WFF20N60 WFF20N60 WFF20N60 WFF20N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 20A,600V,R (Max0.39 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 50nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced

Otros transistores... WFF10N65, WFF12N60, WFF12N65, WFF12N70S, WFF13N50, WFF15N60, WFF18N50, WFF20N60, IRF3205, WFF2N60, WFF2N60B, PJA138K, PJA3400, PJA3401, PJA3402, PJA3404, PJA3405