WFF20N60S Todos los transistores

 

WFF20N60S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WFF20N60S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 34 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 1700 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
   Paquete / Cubierta: TO-220F
 

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WFF20N60S Datasheet (PDF)

 ..1. Size:535K  winsemi
 wff20n60s.pdf pdf_icon

WFF20N60S

WFF20N60SWFF20N60SWFF20N60SWFF20N60SSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures Ultra low Rdson Ultra-low Gate charge(Typical 68nC) 100% UIS Tested RoHS compliantGeneral DescriptionWinsemi Power MOSFET is fabricated using advanced superjunction technology.The resulting device has extremely low

 6.1. Size:271K  winsemi
 wff20n60.pdf pdf_icon

WFF20N60S

WFF20N60WFF20N60WFF20N60WFF20N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 20A,600V,R (Max0.39)@V =10VDS(on) GS Ultra-low Gate charge(Typical 50nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced

Otros transistores... WFF10N65 , WFF12N60 , WFF12N65 , WFF12N70S , WFF13N50 , WFF15N60 , WFF18N50 , WFF20N60 , IRF3205 , WFF2N60 , WFF2N60B , PJA138K , PJA3400 , PJA3401 , PJA3402 , PJA3404 , PJA3405 .

History: GSM8823 | GSM9910 | SWR601Q | STF34N65M5 | AM90N06-03B | AO4884 | HGN093N12SL

 

 
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