WFF20N60S Datasheet and Replacement
Type Designator: WFF20N60S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 68 nC
Cossⓘ - Output Capacitance: 1700 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO-220F
WFF20N60S substitution
WFF20N60S Datasheet (PDF)
wff20n60s.pdf
WFF20N60SWFF20N60SWFF20N60SWFF20N60SSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures Ultra low Rdson Ultra-low Gate charge(Typical 68nC) 100% UIS Tested RoHS compliantGeneral DescriptionWinsemi Power MOSFET is fabricated using advanced superjunction technology.The resulting device has extremely low
wff20n60.pdf
WFF20N60WFF20N60WFF20N60WFF20N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 20A,600V,R (Max0.39)@V =10VDS(on) GS Ultra-low Gate charge(Typical 50nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Keywords - WFF20N60S MOSFET datasheet
WFF20N60S cross reference
WFF20N60S equivalent finder
WFF20N60S lookup
WFF20N60S substitution
WFF20N60S replacement
