PMCM650VNE Todos los transistores

 

PMCM650VNE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMCM650VNE
   Código: AA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.556 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 8.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.9 V
   Qgⓘ - Carga de la puerta: 15.4 nC
   trⓘ - Tiempo de subida: 31 nS
   Cossⓘ - Capacitancia de salida: 330 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: WLCSP6

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PMCM650VNE Datasheet (PDF)

 ..1. Size:369K  nxp
pmcm650vne.pdf

PMCM650VNE
PMCM650VNE

PMCM650VNE12 V, N-channel Trench MOSFET7 April 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer LevelChip-Size Package (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic Disc

 7.1. Size:384K  nxp
pmcm6501une.pdf

PMCM650VNE
PMCM650VNE

PMCM6501UNE20 V, N-channel Trench MOSFET30 May 2017 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-SizePackage (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic Disc

 7.2. Size:398K  nxp
pmcm650cune.pdf

PMCM650VNE
PMCM650VNE

PMCM650CUNE20 V, Common Drain N-channel Trench MOSFETRev. 1.0 8 November 2017 Product data sheet1 Product profile1.1 General descriptionN-channel enhancement mode common-drain dual Field-Effect Transistor (FET) in a 6bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.1.2 Features and benefits Common-drain type for bi-directional current flow L

 7.3. Size:771K  nxp
pmcm6501vne.pdf

PMCM650VNE
PMCM650VNE

PMCM6501VNE12 V, N-channel Trench MOSFET26 August 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer LevelChip-Size Package (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic D

 7.4. Size:378K  nxp
pmcm6501upe.pdf

PMCM650VNE
PMCM650VNE

PMCM6501UPE20 V, P-channel Trench MOSFET3 July 2017 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-SizePackage (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.98 x 1.48 x 0.35 mm Trench MOSFET technology ElectroStatic Discha

 7.5. Size:360K  nxp
pmcm6501vpe.pdf

PMCM650VNE
PMCM650VNE

PMCM6501VPE12 V, P-channel Trench MOSFET10 August 2015 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer LevelChip-Size Package (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic D

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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