PMCM650VNE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMCM650VNE

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.556 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 8.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 31 nS

Cossⓘ - Capacitancia de salida: 330 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: WLCSP6

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PMCM650VNE datasheet

 ..1. Size:369K  nxp
 pmcm650vne.pdf pdf_icon

PMCM650VNE

PMCM650VNE 12 V, N-channel Trench MOSFET 7 April 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic Disc

 7.1. Size:384K  nxp
 pmcm6501une.pdf pdf_icon

PMCM650VNE

PMCM6501UNE 20 V, N-channel Trench MOSFET 30 May 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic Disc

 7.2. Size:398K  nxp
 pmcm650cune.pdf pdf_icon

PMCM650VNE

PMCM650CUNE 20 V, Common Drain N-channel Trench MOSFET Rev. 1.0 8 November 2017 Product data sheet 1 Product profile 1.1 General description N-channel enhancement mode common-drain dual Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 1.2 Features and benefits Common-drain type for bi-directional current flow L

 7.3. Size:771K  nxp
 pmcm6501vne.pdf pdf_icon

PMCM650VNE

PMCM6501VNE 12 V, N-channel Trench MOSFET 26 August 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic D

MOSTRAR MÁS

Otros transistores... PMBFJ176, PMBFJ177, PMBFJ620, PMC85XP, PMCM4401VNE, PMCM4401VPE, PMCM440VNE, PMCM6501VPE, IRFP064N, WFF2N65, WFF2N65B, WFF4N60, WFF5N60, WFF5N60B, WFF5N60C, WFF5N65B, WFF5N80