PMCM650VNE Specs and Replacement

Type Designator: PMCM650VNE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.556 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 8.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: WLCSP6

PMCM650VNE substitution

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PMCM650VNE datasheet

 ..1. Size:369K  nxp
pmcm650vne.pdf pdf_icon

PMCM650VNE

PMCM650VNE 12 V, N-channel Trench MOSFET 7 April 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic Disc... See More ⇒

 7.1. Size:384K  nxp
pmcm6501une.pdf pdf_icon

PMCM650VNE

PMCM6501UNE 20 V, N-channel Trench MOSFET 30 May 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic Disc... See More ⇒

 7.2. Size:398K  nxp
pmcm650cune.pdf pdf_icon

PMCM650VNE

PMCM650CUNE 20 V, Common Drain N-channel Trench MOSFET Rev. 1.0 8 November 2017 Product data sheet 1 Product profile 1.1 General description N-channel enhancement mode common-drain dual Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 1.2 Features and benefits Common-drain type for bi-directional current flow L... See More ⇒

 7.3. Size:771K  nxp
pmcm6501vne.pdf pdf_icon

PMCM650VNE

PMCM6501VNE 12 V, N-channel Trench MOSFET 26 August 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic D... See More ⇒

Detailed specifications: PMBFJ176, PMBFJ177, PMBFJ620, PMC85XP, PMCM4401VNE, PMCM4401VPE, PMCM440VNE, PMCM6501VPE, IRFP064N, WFF2N65, WFF2N65B, WFF4N60, WFF5N60, WFF5N60B, WFF5N60C, WFF5N65B, WFF5N80

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