PMCM650VNE
MOSFET. Datasheet pdf. Equivalent
Type Designator: PMCM650VNE
Marking Code: AA
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.556
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9
V
|Id|ⓘ - Maximum Drain Current: 8.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 15.4
nC
trⓘ - Rise Time: 31
nS
Cossⓘ -
Output Capacitance: 330
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025
Ohm
Package: WLCSP6
PMCM650VNE
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMCM650VNE
Datasheet (PDF)
..1. Size:369K nxp
pmcm650vne.pdf
PMCM650VNE12 V, N-channel Trench MOSFET7 April 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer LevelChip-Size Package (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic Disc
7.1. Size:384K nxp
pmcm6501une.pdf
PMCM6501UNE20 V, N-channel Trench MOSFET30 May 2017 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-SizePackage (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic Disc
7.2. Size:398K nxp
pmcm650cune.pdf
PMCM650CUNE20 V, Common Drain N-channel Trench MOSFETRev. 1.0 8 November 2017 Product data sheet1 Product profile1.1 General descriptionN-channel enhancement mode common-drain dual Field-Effect Transistor (FET) in a 6bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.1.2 Features and benefits Common-drain type for bi-directional current flow L
7.3. Size:771K nxp
pmcm6501vne.pdf
PMCM6501VNE12 V, N-channel Trench MOSFET26 August 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer LevelChip-Size Package (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic D
7.4. Size:378K nxp
pmcm6501upe.pdf
PMCM6501UPE20 V, P-channel Trench MOSFET3 July 2017 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-SizePackage (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.98 x 1.48 x 0.35 mm Trench MOSFET technology ElectroStatic Discha
7.5. Size:360K nxp
pmcm6501vpe.pdf
PMCM6501VPE12 V, P-channel Trench MOSFET10 August 2015 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer LevelChip-Size Package (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic D
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