PMDPB58UPE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMDPB58UPE

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.515 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 3.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 95 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.067 Ohm

Encapsulados: DFN2020-6

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PMDPB58UPE datasheet

 ..1. Size:875K  nxp
 pmdpb58upe.pdf pdf_icon

PMDPB58UPE

PMDPB58UPE 20 V dual P-channel Trench MOSFET Rev. 1 19 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage

 8.1. Size:879K  nxp
 pmdpb55xp.pdf pdf_icon

PMDPB58UPE

PMDPB55XP 20 V, dual P-channel Trench MOSFET Rev. 3 4 June 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Small an

 8.2. Size:879K  nxp
 pmdpb56xn.pdf pdf_icon

PMDPB58UPE

PMDPB56XN 30 V, dual N-channel Trench MOSFET Rev. 1 16 May 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Small an

 8.3. Size:727K  nxp
 pmdpb56xnea.pdf pdf_icon

PMDPB58UPE

PMDPB56XNEA 30 V, dual N-channel Trench MOSFET 19 April 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Leadless medium

MOSTRAR MÁS

Otros transistores... PMCPB5530X, PMCXB900UE, PMDPB28UN, PMDPB30XN, PMDPB38UNE, PMDPB42UN, PMDPB55XP, PMDPB56XN, 60N06, PMDPB70EN, PMDPB70XP, PMDPB70XPE, PMDPB80XP, PMDPB85UPE, PMDPB95XNE, PMDT290UCE, PMDT290UNE