PMDPB58UPE Datasheet. Specs and Replacement

Type Designator: PMDPB58UPE  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.515 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.067 Ohm

Package: DFN2020-6

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PMDPB58UPE datasheet

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PMDPB58UPE

PMDPB58UPE 20 V dual P-channel Trench MOSFET Rev. 1 19 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage ... See More ⇒

 8.1. Size:879K  nxp
 pmdpb55xp.pdf pdf_icon

PMDPB58UPE

PMDPB55XP 20 V, dual P-channel Trench MOSFET Rev. 3 4 June 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Small an... See More ⇒

 8.2. Size:879K  nxp
 pmdpb56xn.pdf pdf_icon

PMDPB58UPE

PMDPB56XN 30 V, dual N-channel Trench MOSFET Rev. 1 16 May 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Small an... See More ⇒

 8.3. Size:727K  nxp
 pmdpb56xnea.pdf pdf_icon

PMDPB58UPE

PMDPB56XNEA 30 V, dual N-channel Trench MOSFET 19 April 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Leadless medium... See More ⇒

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Detailed specifications: PMCPB5530X, PMCXB900UE, PMDPB28UN, PMDPB30XN, PMDPB38UNE, PMDPB42UN, PMDPB55XP, PMDPB56XN, IRF9640, PMDPB70EN, PMDPB70XP, PMDPB70XPE, PMDPB80XP, PMDPB85UPE, PMDPB95XNE, PMDT290UCE, PMDT290UNE

Keywords - PMDPB58UPE MOSFET specs

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