All MOSFET. PMDPB58UPE Datasheet

 

PMDPB58UPE MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMDPB58UPE
   Marking Code: 2A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.515 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.95 V
   |Id|ⓘ - Maximum Drain Current: 3.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.3 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.067 Ohm
   Package: DFN2020-6

 PMDPB58UPE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMDPB58UPE Datasheet (PDF)

 ..1. Size:875K  nxp
pmdpb58upe.pdf

PMDPB58UPE
PMDPB58UPE

PMDPB58UPE20 V dual P-channel Trench MOSFETRev. 1 19 June 2012 Product data sheet1. Product profile1.1 General descriptionDual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage

 8.1. Size:879K  nxp
pmdpb55xp.pdf

PMDPB58UPE
PMDPB58UPE

PMDPB55XP20 V, dual P-channel Trench MOSFETRev. 3 4 June 2012 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Small an

 8.2. Size:879K  nxp
pmdpb56xn.pdf

PMDPB58UPE
PMDPB58UPE

PMDPB56XN30 V, dual N-channel Trench MOSFETRev. 1 16 May 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Small an

 8.3. Size:727K  nxp
pmdpb56xnea.pdf

PMDPB58UPE
PMDPB58UPE

PMDPB56XNEA30 V, dual N-channel Trench MOSFET19 April 2016 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadlessDFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Leadless medium

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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