All MOSFET. PMDPB58UPE Datasheet

 

PMDPB58UPE Datasheet and Replacement


   Type Designator: PMDPB58UPE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.515 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.067 Ohm
   Package: DFN2020-6
 

 PMDPB58UPE substitution

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PMDPB58UPE Datasheet (PDF)

 ..1. Size:875K  nxp
 pmdpb58upe.pdf pdf_icon

PMDPB58UPE

PMDPB58UPE20 V dual P-channel Trench MOSFETRev. 1 19 June 2012 Product data sheet1. Product profile1.1 General descriptionDual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage

 8.1. Size:879K  nxp
 pmdpb55xp.pdf pdf_icon

PMDPB58UPE

PMDPB55XP20 V, dual P-channel Trench MOSFETRev. 3 4 June 2012 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Small an

 8.2. Size:879K  nxp
 pmdpb56xn.pdf pdf_icon

PMDPB58UPE

PMDPB56XN30 V, dual N-channel Trench MOSFETRev. 1 16 May 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Small an

 8.3. Size:727K  nxp
 pmdpb56xnea.pdf pdf_icon

PMDPB58UPE

PMDPB56XNEA30 V, dual N-channel Trench MOSFET19 April 2016 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadlessDFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Leadless medium

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Datasheet: PMCPB5530X , PMCXB900UE , PMDPB28UN , PMDPB30XN , PMDPB38UNE , PMDPB42UN , PMDPB55XP , PMDPB56XN , AO4468 , PMDPB70EN , PMDPB70XP , PMDPB70XPE , PMDPB80XP , PMDPB85UPE , PMDPB95XNE , PMDT290UCE , PMDT290UNE .

History: 2N6789 | GT68N12T | TN0104N8 | 2SK3905

Keywords - PMDPB58UPE MOSFET datasheet

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