Справочник MOSFET. PMDPB58UPE

 

PMDPB58UPE Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: PMDPB58UPE
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.515 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 95 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.067 Ohm
   Тип корпуса: DFN2020-6
     - подбор MOSFET транзистора по параметрам

 

PMDPB58UPE Datasheet (PDF)

 ..1. Size:875K  nxp
 pmdpb58upe.pdf pdf_icon

PMDPB58UPE

PMDPB58UPE20 V dual P-channel Trench MOSFETRev. 1 19 June 2012 Product data sheet1. Product profile1.1 General descriptionDual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage

 8.1. Size:879K  nxp
 pmdpb55xp.pdf pdf_icon

PMDPB58UPE

PMDPB55XP20 V, dual P-channel Trench MOSFETRev. 3 4 June 2012 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Small an

 8.2. Size:879K  nxp
 pmdpb56xn.pdf pdf_icon

PMDPB58UPE

PMDPB56XN30 V, dual N-channel Trench MOSFETRev. 1 16 May 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Small an

 8.3. Size:727K  nxp
 pmdpb56xnea.pdf pdf_icon

PMDPB58UPE

PMDPB56XNEA30 V, dual N-channel Trench MOSFET19 April 2016 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadlessDFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Leadless medium

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