PMDXB600UNE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMDXB600UNE

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.265 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 0.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9.2 nS

Cossⓘ - Capacitancia de salida: 5.4 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.62 Ohm

Encapsulados: DFN1010B-6

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PMDXB600UNE datasheet

 ..1. Size:249K  nxp
 pmdxb600une.pdf pdf_icon

PMDXB600UNE

PMDXB600UNE 20 V, dual N-channel Trench MOSFET 1 July 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD pla

 0.1. Size:734K  nxp
 pmdxb600unel.pdf pdf_icon

PMDXB600UNE

PMDXB600UNEL 20 V, dual N-channel Trench MOSFET 28 June 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low leakage current Leadless ultra small and ultra thin SMD plasti

 9.1. Size:233K  nxp
 pmdxb1200upe.pdf pdf_icon

PMDXB600UNE

PMDXB1200UPE 30 V, dual P-channel Trench MOSFET 25 March 2015 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD pla

 9.2. Size:237K  nxp
 pmdxb550une.pdf pdf_icon

PMDXB600UNE

PMDXB550UNE 30 V, dual N-channel Trench MOSFET 25 March 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD plas

MOSTRAR MÁS

Otros transistores... PMDPB80XP, PMDPB85UPE, PMDPB95XNE, PMDT290UCE, PMDT290UNE, PMDT670UPE, PMDXB1200UPE, PMDXB550UNE, IRFP460, PMDXB950UPE, PMF63UN, PMF77XN, PMF87EN, PMFPB8032XP, PMFPB8040XP, PMG45UN, PMGD130UN