All MOSFET. PMDXB600UNE Datasheet

 

PMDXB600UNE Datasheet and Replacement


   Type Designator: PMDXB600UNE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.265 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.2 nS
   Cossⓘ - Output Capacitance: 5.4 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm
   Package: DFN1010B-6
 

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PMDXB600UNE Datasheet (PDF)

 ..1. Size:249K  nxp
 pmdxb600une.pdf pdf_icon

PMDXB600UNE

PMDXB600UNE20 V, dual N-channel Trench MOSFET1 July 2015 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD pla

 0.1. Size:734K  nxp
 pmdxb600unel.pdf pdf_icon

PMDXB600UNE

PMDXB600UNEL20 V, dual N-channel Trench MOSFET28 June 2016 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low leakage current Leadless ultra small and ultra thin SMD plasti

 9.1. Size:233K  nxp
 pmdxb1200upe.pdf pdf_icon

PMDXB600UNE

PMDXB1200UPE30 V, dual P-channel Trench MOSFET25 March 2015 Product data sheet1. General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD pla

 9.2. Size:237K  nxp
 pmdxb550une.pdf pdf_icon

PMDXB600UNE

PMDXB550UNE30 V, dual N-channel Trench MOSFET25 March 2015 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD plas

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Datasheet: PMDPB80XP , PMDPB85UPE , PMDPB95XNE , PMDT290UCE , PMDT290UNE , PMDT670UPE , PMDXB1200UPE , PMDXB550UNE , IRFP460 , PMDXB950UPE , PMF63UN , PMF77XN , PMF87EN , PMFPB8032XP , PMFPB8040XP , PMG45UN , PMGD130UN .

History: 2SK385 | STV160NF02LAT4 | CHM8968JGP | MS65R600R | STL9P2UH7 | STL9N60M2 | CHM8811JGP

Keywords - PMDXB600UNE MOSFET datasheet

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 PMDXB600UNE replacement

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