PMDXB600UNE MOSFET. Datasheet pdf. Equivalent
Type Designator: PMDXB600UNE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.265 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.95 V
|Id|ⓘ - Maximum Drain Current: 0.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 0.4 nC
trⓘ - Rise Time: 9.2 nS
Cossⓘ - Output Capacitance: 5.4 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm
Package: DFN1010B-6
PMDXB600UNE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMDXB600UNE Datasheet (PDF)
pmdxb600une.pdf
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