Справочник MOSFET. PMDXB600UNE

 

PMDXB600UNE Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: PMDXB600UNE
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 0.265 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 0.6 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 9.2 ns
   Cossⓘ - Выходная емкость: 5.4 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.62 Ohm
   Тип корпуса: DFN1010B-6
 

 Аналог (замена) для PMDXB600UNE

   - подбор ⓘ MOSFET транзистора по параметрам

 

PMDXB600UNE Datasheet (PDF)

 ..1. Size:249K  nxp
 pmdxb600une.pdf pdf_icon

PMDXB600UNE

PMDXB600UNE20 V, dual N-channel Trench MOSFET1 July 2015 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD pla

 0.1. Size:734K  nxp
 pmdxb600unel.pdf pdf_icon

PMDXB600UNE

PMDXB600UNEL20 V, dual N-channel Trench MOSFET28 June 2016 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low leakage current Leadless ultra small and ultra thin SMD plasti

 9.1. Size:233K  nxp
 pmdxb1200upe.pdf pdf_icon

PMDXB600UNE

PMDXB1200UPE30 V, dual P-channel Trench MOSFET25 March 2015 Product data sheet1. General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD pla

 9.2. Size:237K  nxp
 pmdxb550une.pdf pdf_icon

PMDXB600UNE

PMDXB550UNE30 V, dual N-channel Trench MOSFET25 March 2015 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD plas

ПОКАЗАТЬ ЕЩЁ

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