PMFPB8040XP Todos los transistores

 

PMFPB8040XP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMFPB8040XP
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.485 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 63 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.102 Ohm
   Paquete / Cubierta: DFN2020-6
 

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PMFPB8040XP Datasheet (PDF)

 ..1. Size:280K  nxp
 pmfpb8040xp.pdf pdf_icon

PMFPB8040XP

PMFPB8040XP20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottkycombination21 December 2012 Product data sheet1. General descriptionSmall-signal P-channel enhancement mode Field-Effect Transistor (FET) using TrenchMOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118)Surface-Mount

 7.1. Size:277K  nxp
 pmfpb8032xp.pdf pdf_icon

PMFPB8040XP

PMFPB8032XP20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottkycombination21 December 2012 Product data sheet1. General descriptionSmall-signal P-channel enhancement mode Field-Effect Transistor (FET) using TrenchMOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118)Surface-Mount

 9.1. Size:255K  nxp
 pmfpb6532up.pdf pdf_icon

PMFPB8040XP

PMFPB6532UP20 V, 3.5 A / 320 mV VF P-channel MOSFET-Schottky combinationRev. 2 1 June 2012 Product data sheet1. Product profile1.1 General descriptionSmall-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2

 9.2. Size:257K  nxp
 pmfpb6545up.pdf pdf_icon

PMFPB8040XP

PMFPB6545UP20 V, 3.5 A / 440 mV VF P-channel MOSFET-Schottky combinationRev. 2 4 June 2012 Product data sheet1. Product profile1.1 General descriptionSmall-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2

MOSTRAR MÁS

Otros transistores... PMDXB1200UPE , PMDXB550UNE , PMDXB600UNE , PMDXB950UPE , PMF63UN , PMF77XN , PMF87EN , PMFPB8032XP , IRF630 , PMG45UN , PMGD130UN , PMGD175XN , PMGD290UCEA , PMN22XN , PMN27XPE , PMN27XPEA , PMN40UPE .

History: AP6N3R8H | PD1503BV | FDD6696 | AM4407P | TK12J60U | DMN313DLT | APT6015JVFR

 

 
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