PMFPB8040XP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMFPB8040XP

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.485 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 3.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 63 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.102 Ohm

Encapsulados: DFN2020-6

 Búsqueda de reemplazo de PMFPB8040XP MOSFET

- Selecciónⓘ de transistores por parámetros

 

PMFPB8040XP datasheet

 ..1. Size:280K  nxp
 pmfpb8040xp.pdf pdf_icon

PMFPB8040XP

PMFPB8040XP 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination 21 December 2012 Product data sheet 1. General description Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mount

 7.1. Size:277K  nxp
 pmfpb8032xp.pdf pdf_icon

PMFPB8040XP

PMFPB8032XP 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination 21 December 2012 Product data sheet 1. General description Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mount

 9.1. Size:255K  nxp
 pmfpb6532up.pdf pdf_icon

PMFPB8040XP

PMFPB6532UP 20 V, 3.5 A / 320 mV VF P-channel MOSFET-Schottky combination Rev. 2 1 June 2012 Product data sheet 1. Product profile 1.1 General description Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2

 9.2. Size:257K  nxp
 pmfpb6545up.pdf pdf_icon

PMFPB8040XP

PMFPB6545UP 20 V, 3.5 A / 440 mV VF P-channel MOSFET-Schottky combination Rev. 2 4 June 2012 Product data sheet 1. Product profile 1.1 General description Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2

MOSTRAR MÁS

Otros transistores... PMDXB1200UPE, PMDXB550UNE, PMDXB600UNE, PMDXB950UPE, PMF63UN, PMF77XN, PMF87EN, PMFPB8032XP, IRF640N, PMG45UN, PMGD130UN, PMGD175XN, PMGD290UCEA, PMN22XN, PMN27XPE, PMN27XPEA, PMN40UPE