PMFPB8040XP - аналоги, даташиты, параметры транзистора

PMFPB8040XP Datasheet (PDF)

..1. Size:280K nxp
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PMFPB8040XP20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottkycombination21 December 2012 Product data sheet1. General descriptionSmall-signal P-channel enhancement mode Field-Effect Transistor (FET) using TrenchMOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118)Surface-Mount

7.1. Size:277K nxp
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PMFPB8032XP20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottkycombination21 December 2012 Product data sheet1. General descriptionSmall-signal P-channel enhancement mode Field-Effect Transistor (FET) using TrenchMOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118)Surface-Mount

9.1. Size:255K nxp
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PMFPB6532UP20 V, 3.5 A / 320 mV VF P-channel MOSFET-Schottky combinationRev. 2 1 June 2012 Product data sheet1. Product profile1.1 General descriptionSmall-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2

9.2. Size:257K nxp
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PMFPB6545UP20 V, 3.5 A / 440 mV VF P-channel MOSFET-Schottky combinationRev. 2 4 June 2012 Product data sheet1. Product profile1.1 General descriptionSmall-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2

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