All MOSFET. PMFPB8040XP Datasheet

 

PMFPB8040XP MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMFPB8040XP
   Marking Code: 1Y
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.485 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 3.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.7 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 63 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.102 Ohm
   Package: DFN2020-6

 PMFPB8040XP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMFPB8040XP Datasheet (PDF)

 ..1. Size:280K  nxp
 pmfpb8040xp.pdf

PMFPB8040XP PMFPB8040XP

PMFPB8040XP20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottkycombination21 December 2012 Product data sheet1. General descriptionSmall-signal P-channel enhancement mode Field-Effect Transistor (FET) using TrenchMOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118)Surface-Mount

 7.1. Size:277K  nxp
 pmfpb8032xp.pdf

PMFPB8040XP PMFPB8040XP

PMFPB8032XP20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottkycombination21 December 2012 Product data sheet1. General descriptionSmall-signal P-channel enhancement mode Field-Effect Transistor (FET) using TrenchMOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118)Surface-Mount

 9.1. Size:255K  nxp
 pmfpb6532up.pdf

PMFPB8040XP PMFPB8040XP

PMFPB6532UP20 V, 3.5 A / 320 mV VF P-channel MOSFET-Schottky combinationRev. 2 1 June 2012 Product data sheet1. Product profile1.1 General descriptionSmall-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2

 9.2. Size:257K  nxp
 pmfpb6545up.pdf

PMFPB8040XP PMFPB8040XP

PMFPB6545UP20 V, 3.5 A / 440 mV VF P-channel MOSFET-Schottky combinationRev. 2 4 June 2012 Product data sheet1. Product profile1.1 General descriptionSmall-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2

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