PMFPB8040XP Specs and Replacement

Type Designator: PMFPB8040XP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.485 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 63 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.102 Ohm

Package: DFN2020-6

PMFPB8040XP substitution

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PMFPB8040XP datasheet

 ..1. Size:280K  nxp
pmfpb8040xp.pdf pdf_icon

PMFPB8040XP

PMFPB8040XP 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination 21 December 2012 Product data sheet 1. General description Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mount... See More ⇒

 7.1. Size:277K  nxp
pmfpb8032xp.pdf pdf_icon

PMFPB8040XP

PMFPB8032XP 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination 21 December 2012 Product data sheet 1. General description Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mount... See More ⇒

 9.1. Size:255K  nxp
pmfpb6532up.pdf pdf_icon

PMFPB8040XP

PMFPB6532UP 20 V, 3.5 A / 320 mV VF P-channel MOSFET-Schottky combination Rev. 2 1 June 2012 Product data sheet 1. Product profile 1.1 General description Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2... See More ⇒

 9.2. Size:257K  nxp
pmfpb6545up.pdf pdf_icon

PMFPB8040XP

PMFPB6545UP 20 V, 3.5 A / 440 mV VF P-channel MOSFET-Schottky combination Rev. 2 4 June 2012 Product data sheet 1. Product profile 1.1 General description Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2... See More ⇒

Detailed specifications: PMDXB1200UPE, PMDXB550UNE, PMDXB600UNE, PMDXB950UPE, PMF63UN, PMF77XN, PMF87EN, PMFPB8032XP, IRF640N, PMG45UN, PMGD130UN, PMGD175XN, PMGD290UCEA, PMN22XN, PMN27XPE, PMN27XPEA, PMN40UPE

Keywords - PMFPB8040XP MOSFET specs

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