PMPB10XNE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMPB10XNE

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 235 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: DFN2020MD-6

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PMPB10XNE datasheet

 ..1. Size:247K  nxp
 pmpb10xne.pdf pdf_icon

PMPB10XNE

PMPB10XNE 20 V, single N-channel Trench MOSFET 30 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 2.2 kV ESD protection Small and leadless ult

 0.1. Size:294K  nxp
 pmpb10xnea.pdf pdf_icon

PMPB10XNE

PMPB10XNEA 20 V, N-channel Trench MOSFET 27 March 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo

 8.1. Size:321K  nxp
 pmpb100xpea.pdf pdf_icon

PMPB10XNE

PMPB100XPEA 20 V, P-channel Trench MOSFET 13 November 2019 Product data sheet 1. General Description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin S

 8.2. Size:316K  nxp
 pmpb100ene.pdf pdf_icon

PMPB10XNE

PMPB100ENE 30 V, N-channel MOSFET 26 April 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin SMD plastic

MOSTRAR MÁS

Otros transistores... PMN40UPEA, PMN42XPE, PMN42XPEA, PMN50UPE, PMN50XP, PMN70XPE, PMN70XPEA, PMN80XP, STP75NF75, PMPB11EN, PMPB12UN, PMPB13XNE, PMPB15XN, PMPB15XP, PMPB16XN, PMPB19XP, PMPB20EN