PMPB10XNE MOSFET. Datasheet pdf. Equivalent
Type Designator: PMPB10XNE
Marking Code: 1H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 23 nC
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 235 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: DFN2020MD-6
PMPB10XNE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMPB10XNE Datasheet (PDF)
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