PMPB20UN Todos los transistores

 

PMPB20UN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMPB20UN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 6.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 135 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: DFN2020MD-6
 

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PMPB20UN Datasheet (PDF)

 ..1. Size:227K  nxp
 pmpb20un.pdf pdf_icon

PMPB20UN

PMPB20UN20 V, single N-channel Trench MOSFET12 September 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Trench MOSFET technology Small and leadless

 8.1. Size:732K  nxp
 pmpb20xnea.pdf pdf_icon

PMPB20UN

PMPB20XNEA20 V, N-channel Trench MOSFET22 February 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology

 8.2. Size:295K  nxp
 pmpb20xpea.pdf pdf_icon

PMPB20UN

PMPB20XPEA20 V, P-channel Trench MOSFET27 March 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo

 8.3. Size:268K  nxp
 pmpb20en.pdf pdf_icon

PMPB20UN

PMPB20EN30 V N-channel Trench MOSFET14 January 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.2. Features and benefits Trench MOSFET technology Very fast switching Small and leadless ultra t

MOSTRAR MÁS

Otros transistores... PMPB11EN , PMPB12UN , PMPB13XNE , PMPB15XN , PMPB15XP , PMPB16XN , PMPB19XP , PMPB20EN , AON7410 , PMPB20XPE , PMPB215ENEA , PMPB23XNE , PMPB27EP , PMPB29XNE , PMPB29XPE , PMPB33XN , PMPB33XP .

History: 4N60L-TF3T-T | AM1523CE | 30N06G-TN3-T | AM1537CE | CHM3082JGP | WMP16N65SR

 

 
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