All MOSFET. PMPB20UN Datasheet

 

PMPB20UN Datasheet and Replacement


   Type Designator: PMPB20UN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 6.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: DFN2020MD-6
 

 PMPB20UN substitution

   - MOSFET ⓘ Cross-Reference Search

 

PMPB20UN Datasheet (PDF)

 ..1. Size:227K  nxp
 pmpb20un.pdf pdf_icon

PMPB20UN

PMPB20UN20 V, single N-channel Trench MOSFET12 September 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Trench MOSFET technology Small and leadless

 8.1. Size:732K  nxp
 pmpb20xnea.pdf pdf_icon

PMPB20UN

PMPB20XNEA20 V, N-channel Trench MOSFET22 February 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology

 8.2. Size:295K  nxp
 pmpb20xpea.pdf pdf_icon

PMPB20UN

PMPB20XPEA20 V, P-channel Trench MOSFET27 March 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo

 8.3. Size:268K  nxp
 pmpb20en.pdf pdf_icon

PMPB20UN

PMPB20EN30 V N-channel Trench MOSFET14 January 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.2. Features and benefits Trench MOSFET technology Very fast switching Small and leadless ultra t

SHOW MORE

Datasheet: PMPB11EN , PMPB12UN , PMPB13XNE , PMPB15XN , PMPB15XP , PMPB16XN , PMPB19XP , PMPB20EN , AON7410 , PMPB20XPE , PMPB215ENEA , PMPB23XNE , PMPB27EP , PMPB29XNE , PMPB29XPE , PMPB33XN , PMPB33XP .

History: RFP5P12 | IRF820ASPBF | IRFY430CM

Keywords - PMPB20UN MOSFET datasheet

 PMPB20UN cross reference
 PMPB20UN equivalent finder
 PMPB20UN lookup
 PMPB20UN substitution
 PMPB20UN replacement

 

 
Back to Top

 


 
.