PMPB20UN Specs and Replacement

Type Designator: PMPB20UN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 6.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 135 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: DFN2020MD-6

PMPB20UN substitution

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PMPB20UN datasheet

 ..1. Size:227K  nxp
 pmpb20un.pdf pdf_icon

PMPB20UN

PMPB20UN 20 V, single N-channel Trench MOSFET 12 September 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Trench MOSFET technology Small and leadless ... See More ⇒

 8.1. Size:732K  nxp
 pmpb20xnea.pdf pdf_icon

PMPB20UN

PMPB20XNEA 20 V, N-channel Trench MOSFET 22 February 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ... See More ⇒

 8.2. Size:295K  nxp
 pmpb20xpea.pdf pdf_icon

PMPB20UN

PMPB20XPEA 20 V, P-channel Trench MOSFET 27 March 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo... See More ⇒

 8.3. Size:268K  nxp
 pmpb20en.pdf pdf_icon

PMPB20UN

PMPB20EN 30 V N-channel Trench MOSFET 14 January 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Very fast switching Small and leadless ultra t... See More ⇒

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Detailed specifications: PMPB11EN, PMPB12UN, PMPB13XNE, PMPB15XN, PMPB15XP, PMPB16XN, PMPB19XP, PMPB20EN, SPP20N60C3, PMPB20XPE, PMPB215ENEA, PMPB23XNE, PMPB27EP, PMPB29XNE, PMPB29XPE, PMPB33XN, PMPB33XP

Keywords - PMPB20UN MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.